Patents by Inventor J.W. WU

J.W. WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET with doped isolation insulating layer
    Patent number: 10192985
    Abstract: A method for manufacturing a semiconductor device is provided including forming one or more fins over a substrate and forming an isolation insulating layer over the one or more fins. A dopant is introduced into the isolation insulating layer. The isolation insulating layer containing the dopant is annealed, and a portion of the oxide layer is removed so as to expose a portion of the fins.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: January 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Ting-Chun Wang, Wei-Ming You, J. W. Wu
  • FinFET with doped isolation insulating layer
    Patent number: 10164095
    Abstract: A method for manufacturing a semiconductor device is provided including forming one or more fins over a substrate and forming an isolation insulating layer over the one or more fins. A dopant is introduced into the isolation insulating layer. The isolation insulating layer containing the dopant is annealed, and a portion of the oxide layer is removed so as to expose a portion of the fins.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Ting-Chun Wang, Wei-Ming You, J. W. Wu
  • FINFET WITH DOPED ISOLATION INSULATING LAYER
    Publication number: 20170025535
    Abstract: A method for manufacturing a semiconductor device is provided including forming one or more fins over a substrate and forming an isolation insulating layer over the one or more fins. A dopant is introduced into the isolation insulating layer. The isolation insulating layer containing the dopant is annealed, and a portion of the oxide layer is removed so as to expose a portion of the fins.
    Type: Application
    Filed: July 21, 2015
    Publication date: January 26, 2017
    Inventors: Cheng-Ta WU, Ting-Chun WANG, Wei-Ming YOU, J.W. WU