Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Abstract: An image processing device including: a decision pixel manager for setting a decision area for a defect candidate pixel, and determining a first decision pixel and a second decision pixel, based on first phase information of pixels included in the decision area with respect to a first modulation frequency of a sensing light source among the pixels; a target pixel determiner for calculating a phase difference between the first decision pixel and the second decision pixel, based on second phase information of the pixels with respect to a second modulation frequency of the sensing light source, and determining the defect candidate pixel as a target pixel, corresponding to that the phase difference exceeds a predetermined reference value; and a phase corrector for changing a phase of the target pixel, based on the phase difference.

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Abstract: A semiconductor memory device includes a substrate including an active area defined by an element separation layer, the active area including a first portion and second portions defined on both sides of the first portion a bit line crossing the active area and extending in a first direction on the substrate, and a bit line contact disposed between the substrate and the bit line and directly connected to the first portion of the active area. The bit line contact includes an indent area recessed into the substrate and an upper area on the indent area, a width of the indent area decreases as a distance from the bit line increases, the indent area includes a slope forming a boundary with the substrate and having a straight line shape, and a starting point of the slope of the indent area is lower than an upper surface of the element separation layer.

Abstract: An image sensing device includes an image sensor including at least one pixel including a plurality of color channels and an image processor for processing an input image, based on brightness intensity values of the plurality of color channels. The image processor includes: a transmission map generator for generating color channel transmission maps including transmission values that are obtained by respectively converting brightness intensity values of the plurality of color channels, and generating a target transmission map including target transmission values that are obtained by multiplying transmission values among the transmission values that correspond to color channels; a white pixel detector for determining target pixels that are included in a white area, based on the target transmission map; and a white balance adjuster for adjusting white balance, based on average brightness intensity values of respective color channels.

Abstract: An image sensing device includes an image sensor including at least one pixel including a plurality of color channels and an image processor for processing an input image, based on brightness intensity values of the plurality of color channels. The image processor includes: a transmission map generator for generating color channel transmission maps including transmission values that are obtained by respectively converting brightness intensity values of the plurality of color channels, and generating a target transmission map including target transmission values that are obtained by multiplying transmission values among the transmission values that correspond to color channels; a white pixel detector for determining target pixels that are included in a white area, based on the target transmission map; and a white balance adjuster for adjusting white balance, based on average brightness intensity values of respective color channels.

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: A light source apparatus includes a light source disposed adjacent to a side portion of a light guide plate and a light source driver driving the light source. The light source driver includes a booster and a protecting circuit. The booster boosts an input voltage to a driving voltage for driving the light source. The protecting circuit selectively cuts off the input voltage applied to the booster according to an output current of the booster, reducing the risk of damage to the driver due to shorts, overcurrents, or the like.

Abstract: A light emitting diode (LED) driver is provided that includes a light emitting diode, a converter connected to the light emitting diode, wherein the converter receives an input voltage and converts the input voltage to a basic voltage for driving the light emitting diode, a current regulator connected to the light emitting diode, a first operational amplifier connected to the current regulator, an analog dimming voltage generating unit including a second operational amplifier, a first resistor, a second resistor, and a third resistor, wherein a first terminal of the first resistor, a first terminal of the second resistor, and a first terminal of the third resistor are connected to a non-inversion terminal of the second operational amplifier, and connected to the first operational amplifier, and a pulse-width-modulation dimming pulse generating unit connected to a second terminal of the third resistor.

Abstract: A light emitting diode (LED) driver is provided that includes a light emitting diode, a converter connected to the light emitting diode, wherein the converter receives an input voltage and converts the input voltage to a basic voltage for driving the light emitting diode, a current regulator connected to the light emitting diode, a first operational amplifier connected to the current regulator, an analog dimming voltage generating unit including a second operational amplifier, a first resistor, a second resistor, and a third resistor, wherein a first terminal of the first resistor, a first terminal of the second resistor, and a first terminal of the third resistor are connected to a non-inversion terminal of the second operational amplifier, and connected to the first operational amplifier, and a pulse-width-modulation dimming pulse generating unit connected to a second terminal of the third resistor.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: A light source apparatus includes a light source disposed adjacent to a side portion of a light guide plate and a light source driver driving the light source. The light source driver includes a booster and a protecting circuit. The booster boosts an input voltage to a driving voltage for driving the light source. The protecting circuit selectively cuts off the input voltage applied to the booster according to an output current of the booster, reducing the risk of damage to the driver due to shorts, overcurrents, or the like.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.