Patents by Inventor Ja-Yong Kim

Ja-Yong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD FOR FABRICATING THE SAME
    Publication number: 20240145531
    Abstract: A method for fabricating a semiconductor device includes: forming a first oxide layer containing a first element over a first electrode layer; forming a second oxide layer containing a second element over the first oxide layer; forming a stacked structure in which a plurality of first oxide layers and a plurality of second oxide layers are alternately stacked by repeating the forming of the first oxide layer and the forming of the second oxide layer a plurality of times; and forming a second electrode layer over the stacked structure, wherein a thickness of a lowermost first oxide layer among the plurality of first oxide layers is greater than a thickness of each of other first oxide layers.
    Type: Application
    Filed: April 14, 2023
    Publication date: May 2, 2024
    Inventors: Jung Wook WOO, Sei Yon KIM, Min Chul SUNG, Yeon Gyu LEE, Do Hee KIM, Ja Yong KIM
  • METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS
    Publication number: 20130022744
    Abstract: A noble metal layer is formed using ozone (O3) as a reaction gas.
    Type: Application
    Filed: September 12, 2012
    Publication date: January 24, 2013
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Deok-Sin KIL, Kee-Jeung LEE, Young-Dae KIM, Jin-Hyock KIM, Kwan-Woo DO, Kyung-Woong PARK, Jeong-Yeop LEE, Ja-Yong KIM
  • Method of forming noble metal layer using ozone reaction gas
    Patent number: 8288274
    Abstract: A noble metal layer is formed using ozone (O3) as a reaction gas.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: October 16, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Deok-Sin Kil, Kee-Jeung Lee, Young-Dae Kim, Jin-Hyock Kim, Kwan-Woo Do, Kyung-Woong Park, Jeong-Yeop Lee, Ja-Yong Kim
  • Method of forming noble metal layer using ozone reaction gas
    Publication number: 20090263967
    Abstract: A noble metal layer is formed using ozone (O3) as a reaction gas.
    Type: Application
    Filed: December 30, 2008
    Publication date: October 22, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventors: Deok-Sin Kil, Kee-Jeung Lee, Young-Dae Kim, Jin-Hyock Kim, Kwan-Woo Do, Kyung-Woong Park, Jeong-Yeop Lee, Ja-Yong Kim