Abstract: A semiconductor manufacturing equipment may include a process chamber for treating a substrate; a front-end module including a first transfer robot, wherein the first transfer robot may be configured to transport the substrate received in a container; a transfer chamber between the front-end module and the process chamber, wherein the transfer chamber may be configured to load or unload the substrate into or out of the process chamber; and a cassette capable of receiving a replaceable component capable of being used in the process chamber. The front-end module may include a seat plate configured to move in a sliding manner so as to retract or extend into or from the front-end module. The cassette may be configured to be loaded into the front-end module while the cassette is seated on the seat plate.

Abstract: A CMP slurry composition for polishing copper and a copper film polishing method using the same, the CMP slurry composition includes a solvent; an abrasive agent; and a compound including a structural unit represented by Formula 1 or a compound including a structural unit represented by Formula 2,

Abstract: A compound or a salt thereof, a CMP slurry composition including the same, and a polishing method using the same, the compound being represented by Formula 1,

Abstract: An anisotropic conductive film composition, an anisotropic conductive film prepared using the same, and a connection structure using the same, the anisotropic conductive film including a binder resin; a curable alicyclic epoxy compound; a curable oxetane compound; a quaternary ammonium catalyst; and conductive particles, wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1: Heat quantity variation rate (%)=[(H0?H1)/H0]×100??Equation 1 wherein H0 is a DSC heat quantity of the anisotropic conductive film, as measured at 25° C. and a time point of 0 hr, and H1 is a DSC heat quantity of the anisotropic conductive film, as measured after being left at 40° C. for 24 hours.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60° C. to 85° C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below, Elastic modulus change(%)={(M1?M0)/M0}×100??[Equation 1] wherein M0 is an initial elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C., and M1 is a elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C. after the film is left at 25° C. for 170 hours.

Abstract: An anisotropic conductive film composition, an anisotropic conductive film prepared using the same, and a connection structure using the same, the anisotropic conductive film including a binder resin; a curable alicyclic epoxy compound; a curable oxetane compound; a quaternary ammonium catalyst; and conductive particles, wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1: Heat quantity variation rate (%)=[(H0?H1)/H0]×100??Equation 1 wherein H0 is a DSC heat quantity of the anisotropic conductive film, as measured at 25° C. and a time point of 0 hr, and H1 is a DSC heat quantity of the anisotropic conductive film, as measured after being left at 40° C. for 24 hours.

Abstract: A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of 120° C. to 200° C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

Abstract: Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mm2 or more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm2·%) as represented by the following equation 1: slope(A)=(½Smax?S0)/x??(1), wherein: Smax=maximum stress, x=strain (%) at half (½) of the maximum stress, and S0=stress at a strain of 0.

Abstract: An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×105/d2 to 10.0×105/d2 (particles) per square millimeter (mm2) (where d is a diameter of the conductive particles in ?m).

Abstract: A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample, Increased ratio of expansion length (%)=[(length of corresponding layer in width direction after compression?length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60° C. to 85° C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below, Elastic modulus change(%)={(M1?M0)/M0}×100??[Equation 1] wherein M0 is an initial elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C., and M1 is a elastic modulus in kgf/cm2 of the anisotropic conductive film as measured at 25° C. after the film is left at 25° C. for 170 hours.

Abstract: A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of 120° C. to 200° C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

Abstract: Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mm2 or more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm2·%) as represented by the following equation 1: slope(A)=(½Smax?S0)/x??(1), wherein: Smax=maximum stress, x=strain (%) at half (½) of the maximum stress, and S0=stress at a strain of 0.

Abstract: A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample, Increased ratio of expansion length(%)=[(length of corresponding layer in width direction after compression?length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.

Abstract: An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×105/d2 to 10.0×105/d2 (particles) per square millimeter (mm2) (where d is a diameter of the conductive particles in ?m).

Abstract: An anisotropic conductive film composition includes a polymer resin, a first epoxy resin including at least one of a bisphenol epoxy resin, a novolac epoxy resin, a glycidyl epoxy resin, an aliphatic epoxy resin, and an alicyclic epoxy resin, a second epoxy resin including an acetal epoxy resin, an epoxy resin curing agent, and conductive particles.

Abstract: An anisotropic conductive film composition includes a polymer resin, a first epoxy resin including at least one of a bisphenol epoxy resin, a novolac epoxy resin, a glycidyl epoxy resin, an aliphatic epoxy resin, and an alicyclic epoxy resin, a second epoxy resin including an acetal epoxy resin, an epoxy resin curing agent, and conductive particles.