Patents by Inventor Jaakko Anttila
Jaakko Anttila has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11646194Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.Type: GrantFiled: February 19, 2020Date of Patent: May 9, 2023Assignee: ASM IP Holding B.V.Inventors: Antti Niskanen, Suvi Haukka, Jaakko Anttila
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Patent number: 11421321Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.Type: GrantFiled: July 28, 2015Date of Patent: August 23, 2022Assignee: ASM IP HOLDING B.V.Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaakko Anttila, Yukihiro Mori
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Publication number: 20220195595Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.Type: ApplicationFiled: December 17, 2021Publication date: June 23, 2022Inventors: Chiyu Zhu, Jaakko Anttila
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Publication number: 20210399111Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: September 2, 2021Publication date: December 23, 2021Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 11139383Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: April 15, 2020Date of Patent: October 5, 2021Assignee: ASM IP HOLDING B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 11062914Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: GrantFiled: August 7, 2020Date of Patent: July 13, 2021Assignee: ASM IP Holding B.V.Inventors: Antti Juhani Niskanen, Jaakko Anttila
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Publication number: 20200365416Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: ApplicationFiled: August 7, 2020Publication date: November 19, 2020Inventors: Antti Juhani Niskanen, Jaakko Anttila
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Publication number: 20200328285Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: April 15, 2020Publication date: October 15, 2020Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 10741411Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: GrantFiled: September 27, 2018Date of Patent: August 11, 2020Assignee: ASM IP Holding B.V.Inventors: Antti Juhani Niskanen, Jaakko Anttila
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Publication number: 20200203145Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.Type: ApplicationFiled: February 19, 2020Publication date: June 25, 2020Inventors: Antti Niskanen, Suvi Haukka, Jaakko Anttila
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Patent number: 10636889Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: June 4, 2018Date of Patent: April 28, 2020Assignee: ASM IP Holding B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 10573511Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.Type: GrantFiled: March 13, 2013Date of Patent: February 25, 2020Assignee: ASM IP Holding B.V.Inventors: Antti Niskanen, Suvi Haukka, Jaakko Anttila
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Publication number: 20190103285Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: ApplicationFiled: September 27, 2018Publication date: April 4, 2019Inventors: Antti Juhani Niskanen, Jaakko Anttila
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Publication number: 20190043962Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: June 4, 2018Publication date: February 7, 2019Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 10115603Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: GrantFiled: October 21, 2016Date of Patent: October 30, 2018Assignee: ASM IP HOLDING B.V.Inventors: Antti Juhani Niskanen, Jaakko Anttila
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Publication number: 20180285894Abstract: A system for real time marketing of perishable commodities, for example food, is presented. The system comprises quality sensors (103) for obtaining information related to quality of the perishable commodities, a sale monitoring system (104) for producing sale monitoring data indicative of consumer demand of the perishable commodities, and a processing and data transfer system (105) for producing quality indicator data on the basis of the information obtained with the quality sensors. The processing and data transfer system is configured to determine selling prices of the perishable commodities in accordance with at least the quality indicator data and the sale monitoring data so that a weakening in the quality tends to decrease a selling price whereas an increase in the consumer demand tends to increase the selling price. Thus, the portion of the perishable commodities which remain unsold can be reduced without excessively sacrificing the price level.Type: ApplicationFiled: September 20, 2016Publication date: October 4, 2018Applicant: Foller OyInventors: Tomi KANKAINEN, Jaakko ANTTILA, Vladimir ABRAMOV, Antti ELOHEIMO, Ville HIRVONEN, Anu KANKAINEN
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Patent number: 10074541Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.Type: GrantFiled: July 10, 2017Date of Patent: September 11, 2018Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Jaakko Anttila
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Patent number: 10002936Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: October 21, 2015Date of Patent: June 19, 2018Assignee: ASM IP HOLDING B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Publication number: 20180061648Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.Type: ApplicationFiled: July 10, 2017Publication date: March 1, 2018Inventors: Tom E. Blomberg, Jaakko Anttila
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Patent number: 9704716Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.Type: GrantFiled: August 8, 2016Date of Patent: July 11, 2017Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Jaakko Anttila