Patents by Inventor Jaakko Makela
Jaakko Makela has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11923236Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.Type: GrantFiled: September 12, 2022Date of Patent: March 5, 2024Assignee: TURUN YLIOPISTOInventors: Pekka Laukkanen, Mikhail Kuzmin, Jaakko Mäkelä, Marjukka Tuominen, Marko Punkkinen, Antti Lahti, Kalevi Kokko, Juha-Pekka Lehtiö
-
Patent number: 11646193Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: GrantFiled: December 9, 2019Date of Patent: May 9, 2023Assignee: TURUN YLIOPISTOInventors: Mikhail Kuzmin, Pekka Laukkanen, Yasir Muhammad, Marjukka Tuominen, Johnny Dahl, Veikko Tuominen, Jaakko Makela, Marko Punkkinen, Kalevi Kokko
-
Patent number: 11615952Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: GrantFiled: February 17, 2016Date of Patent: March 28, 2023Assignee: TURUN YLIOPISTOInventors: Mikhail Kuzmin, Pekka Laukkanen, Yasir Muhammad, Marjukka Tuominen, Johnny Dahl, Veikko Tuominen, Jaakko Makela, Marko Punkkinen, Kalevi Kokko
-
Publication number: 20230005786Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.Type: ApplicationFiled: September 12, 2022Publication date: January 5, 2023Applicant: Turun yliopistoInventors: Pekka LAUKKANEN, Mikhail Kuzmin, Jaakko Mäkelä, Marjukka Tuominen, Marko Punkkinen, Antti Lahti, Kalevi Kokko, Juha-Pekka Lehtio
-
Patent number: 11443977Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).Type: GrantFiled: May 30, 2018Date of Patent: September 13, 2022Assignee: TURUN YLIOPISTOInventors: Pekka Laukkanen, Mikhail Kuzmin, Jaakko Mäkelä, Marjukka Tuominen, Marko Punkkinen, Antti Lahti, Kalevi Kokko, Juha-Pekka Lehtiö
-
Publication number: 20200111662Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: ApplicationFiled: December 9, 2019Publication date: April 9, 2020Applicant: Turun YliopistoInventors: Mikhail KUZMIN, Pekka LAUKKANEN, Yasir MUHAMMAD, Marjukka TUOMINEN, Johnny DAHL, Veikko TUOMINEN, Jaakko MAKELA, Marko PUNKKINEN, Kalevi KOKKO
-
Publication number: 20200105576Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).Type: ApplicationFiled: May 30, 2018Publication date: April 2, 2020Applicant: Turun yliopistoInventors: Pekka LAUKKANEN, Mikhail KUZMIN, Jaakko MÄKELÄ, Marjukka TUOMINEN, Marko PUNKKINEN, Antti LAHTI, Kalevi KOKKO, Juha-Pekka LEHTIÖ
-
Publication number: 20180218901Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: ApplicationFiled: February 17, 2016Publication date: August 2, 2018Applicant: Turun YliopistoInventors: Mikhail KUZMIN, Pekka LAUKKANEN, Yasir MUHAMMAD, Marjukka TUOMINEN, Johnny DAHL, Veikko TUOMINEN, Jaakko MAKELA, Marko PUNKKINEN, Kalevi KOKKO
-
Publication number: 20040177400Abstract: The present invention provides constructs and methods for increasing the content of selected amino acids by targeted expression or accumulation of a protein enriched with an amino acid sequence entailing said protein in a plant species or in a tissue or an organ of a plant. The increased content is obtained by stable transformation of plants with a recombinant nucleotide sequence construct encoding a carrier protein having in its 3′-terminal end a polyamino acid extension and operably linked with a tissue or an organ specific regulatory sequence. The increased amino acid content in plant tissues, particularly membraneous oil bodies and cell walls of seed provides a composition useful as animal feed.Type: ApplicationFiled: February 27, 2004Publication date: September 9, 2004Inventors: Tony Mikaer Wahlroos, Josif Grigorievieh Atabekov, Yurii Leonidivich Dorokhov, Petri Eerik Susi, Mauri Jaakko Makela, Timo Kalevi Korpela
-
Patent number: 6287415Abstract: Arrangement in a soda recovery boiler, comprising normal melt chutes (6) for removing molten salt from the recovery boiler (1). The recovery boiler (1) comprises an outlet (8), mounted in the wall of the recovery boiler such that it is situated lower down than the normal melt chutes (6), in which case the molten salt can be removed from the bottom of the recovery boiler substantially through the outlet (8), when the recovery boiler (1) is emptied for maintenance or the like.Type: GrantFiled: August 31, 2000Date of Patent: September 11, 2001Assignee: Kvaerner Pulping OyInventors: Kalle Salmi, Jaakko Mäkelä, Aki Hakulinen, Tuomo Ruohola
-
Patent number: 5658137Abstract: A rotator includes an axle and an associated rotor component having lamellar vanes. A case component surrounds the rotor component. Chambers arranged symmetrically in relation to the axle are disposed between the lamellar vanes. These chambers are pressurized by oil fed through feed and outlet openings connected to the chambers. Bearing members are arranged in an axial direction on both sides of the rotor component. A conical bearing carries the axial rotor load and is formed by a conical arrangement of juxtaposed surfaces defined by the case and axle. The case includes channels leading from the chambers to the conical surfaces for communicating pressurized oil thereamong. The conical arrangement includes spaced gaskets. Oil pressure applied between the conical surfaces raises the axle off the case. In the absence of oil pressure, the conical surfaces lock as a result of friction between the case and axle.Type: GrantFiled: January 16, 1996Date of Patent: August 19, 1997Inventor: Jaakko Makela