Abstract: An optoelectronic semiconductor structure (20) comprises an n-type semiconductor region (3); a p-type semiconductor region (1); a p-n junction formed between the n-type and p-type semiconductor regions; and an active region (2). According to the present invention, the optoelectronic semiconductor structure (20) is configured to transport, when in use, charge carriers between the active region (2) and each of the retype semiconductor region (3) and the p-type semiconductor region (1) through a single substantially planar boundary surface (9) of the active region.

Abstract: An optoelectronic semiconductor structure (20) comprises an n-type semiconductor region (3); a p-type semiconductor region (1); a p-n junction formed between the n-type and p-type semiconductor regions; and an active region (2). According to the present invention, the optoelectronic semiconductor structure (20) is configured to transport, when in use, charge carriers between the active region (2) and each of the retype semiconductor region (3) and the p-type semiconductor region (1) through a single substantially planar boundary surface (9) of the active region.

Abstract: A method and device for generating electrical energy in a thermophotonic generator, where electroluminescence and heat energy absorbed from the environment is used to generate light or other electromagnetic radiation that transfers energy from the emitting element to the absorbing element, where a part of the energy of the absorbed radiation generates electrical energy.

Abstract: A method and device for transferring heat in a heat pump, where heat energy is transferred with the aid of light or other electromagnetic radiation from an element (1) emitting radiation to an element (2) absorbing radiation in a direction opposite to the direction defined by the second law of thermodynamics and in which a part of the energy of the absorbed radiation is converted back to an exploitable form of energy, like electrical or mechanical energy.