Patents by Inventor Jaako Anttila

Jaako Anttila has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220341040
    Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
    Type: Application
    Filed: July 12, 2022
    Publication date: October 27, 2022
    Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori
  • Patent number: 10204790
    Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: February 12, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori
  • Publication number: 20170032956
    Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
    Type: Application
    Filed: July 28, 2015
    Publication date: February 2, 2017
    Inventors: Jun Kawahara, Suvi Haukka, Antti Niskanen, Eva Tois, Raija Matero, Hidemi Suemori, Jaako Anttila, Yukihiro Mori