Abstract: A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12, 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14). In one embodiment the fingers of the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).

Abstract: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15%, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16).

Abstract: The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 ?H, and must have an equivalent series resistance of less than 0.1 ?. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.

Abstract: A magnetic field sensor assembly (401a, 401b) for measuring an angular direction (?) of a sensed magnetic field (Happl) relative to the assembly, the sensor assembly comprising: a sensor (404a, 404b) of a first type configured to sense an orientation of the sensed magnetic field; a sensor (402, 406) of a second type configured to measure an orientation and a direction of the sensed magnetic field; and processing circuitry (403, 405) connected to each of the magnetic field sensors, the processing circuitry being configured to process output signals from the sensor of the first type to determine an uncorrected sensed magnetic field angle and to apply an offset angle to the uncorrected magnetic field angle dependent on a logical combination of signs of output signals from the sensors of the first and second types.

Abstract: An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

Abstract: The invention relates to a Magnetic memory system (1, 20) which comprises an information layer (13) and a sensor (2, 22) for cooperating with the information layer (13). The information layer (13) comprises a pattern of magnetic bits (4a, 4b, 4c, 4d, 24a, 24c, 24d) which constitutes an array of bit locations. A bit magnetic field (3a, 3b, 3c, 3d) at a bit location represents a logical value (LO, L1/2, L1). The sensor (2, 22) comprises a magnetoresistive element (6, 26) comprising a fixed magnetic layer (7) and a free magnetic layer (8). The free magnetic layer (8) has a magnetization axis (10) along which the free magnetic layer retains a free magnetization direction (1 Ib, 1 Ic, 21b, 21c).

Abstract: The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

Abstract: In an example embodiment, a magnetic sensor has a magnet and a magneto-resistive, arranged on a substrate such that magnetic field lines through the magneto-resistive element are substantially parallel to a plane of the substrate. Movement of a movable magnetically permeable element MMPE near the substrate is detected as it alters the number of field lines through the element. The MMPE can be more sensitive than devices arranged with perpendicular field lines, and can be easier to manufacture and integrate. Applications include analog pointers, pressure sensors and microphones. The MMPE can use magnets placed either side of the element to detect changes in size of a gap above the element. As the gap closes, less of the parallel oriented field passes through the magneto resistive element.

Abstract: A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12, 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14). In one embodiment the fingers of the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).

Abstract: A bridge type magnetic sensor is disclosed having four resistive elements in a bridge arrangement, two of the resistive elements on opposing sides of the bridge having a magnetoresistive characteristic such that their resistance increases with increasing positive magnetic field and with increasing negative magnetic field. A frequency doubling is obtained because the output characteristic of the magnetic sensor is a V-shaped curve, where the signal rises for increasing positive and negative fields.

Abstract: The invention provides a magnetic field sensor or current sensor which can exhibit a substantially linear relationship between the sensor signal and the logarithm of the magnetic field or current. The sensor may be used as a wide dynamic range sensor which can offer a constant relative sensitivity and a uniform SNR over several decades. The design of the sensor device may be implemented in discrete magnetic field sensors or current sensors as well as in integrated current sensors in ICs comprising MRAM modules.

Abstract: An implantable drug delivery system is proposed which does not need internal electronics, but can be activated from outside the body. The system comprises a device (10) for the controlled release of a substance, the device (10) comprising at least one compartment (20) in a substrate (11), the compartment (20) being closed by a valve (30), wherein the valve is openable and comprises at least a first material (31) and a second material (32), the opening and/or closing of the valve (30) being provided upon heating and/or cooling of the first and/or second material (31, 32), the first material (31) being heated by electromagnetic induction.

Abstract: The invention relates to a method of manufacturing a device (10) comprising a layer (12) having a pattern of disjunct portions (14) of magnetic material (18) generating a corresponding pattern of local magnetic fields (2). The magnetic material (18) is constituted of particles (22) dispersed in a solid substance (24). The particles are magnetically stable and substantially aligned for generating the local magnetic fields (2). The method comprises the steps of: providing a substance (32) having the particles (22) dispersed in the substance (32), the substance (32) having a viscosity for allowing the particles (22) to move in the substance (32), creating the pattern of disjunct portions (14) of the substance (32) in the layer (12) of the device (10), applying an external magnetic field (50) for substantially aligning the particles (22) in the disjunct portions (14) of the substance (32), and solidifying the substance (32) for obtaining the solid substance (24).

Abstract: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16).

Abstract: The invention relates to a read only magnetic information carrier (1b, 1c, 1d) comprising a substrate (2), an information layer (3) and a stabilizing layer (15a, 15b). The information layer (3) comprises a pattern of magnetic bits (4) of magnetic material wherein the pattern of magnetic bits (4) constitutes an array of bit locations. The presence or absence of the magnetic material at a bit location represents a value of the bit location by a magnetic field (5) having a predetermined magnetization direction (6). The stabilizing layer (15a, 15b) is arranged between the substrate (2) and the information layer (3) and comprises hard magnetic material (8, 9) which is magnetically coupled to the magnetic material of the magnetic bit (4). The magnetically coupled hard magnetic material (8, 9) provides the predetermined magnetization direction (6) of the magnetic field (5).

Abstract: The invention relates to a Magnetic memory system (1, 20) which comprises an information layer (13) and a sensor (2, 22) for cooperating with the information layer (13). The information layer (13) comprises a pattern of magnetic bits (4a, 4b, 4c, 4d, 24a, 24c, 24d) which constitutes an array of bit locations. A bit magnetic field (3a, 3b, 3c, 3d) at a bit location represents a logical value (LO, L1/2, L1). The sensor (2, 22) comprises a magnetoresistive element (6, 26) comprising a fixed magnetic layer (7) and a free magnetic layer (8). The free magnetic layer (8) has a magnetization axis (10) along which the free magnetic layer retains a free magnetization direction (1 Ib, 1 Ic, 21b, 21c).

Abstract: Consistent with an example embodiment, devices comprise sensor arrangements with field detectors for detecting components of magnetic fields in planes of the field detectors. The sensor arrangements further include movable objects for, in response to tilting movements, changing at least parts of the components of the magnetic fields in the planes of the field detectors so that the sensor arrangements are made less sensitive to in-plane stray fields by providing the field detectors with saturated field-dependent elements. The movable object may comprise a movable field generator for generating the magnetic field, or the movable object and the field generator may be different objects. The magnetic field is such that the field-dependent element is saturated. The field generator is smaller than the field detector, and the movable object is larger than the field detector, to reduce alignment problems. The movable object has a pivoting point close to the field detector.

Abstract: The invention relates to variable focus lenses based on magneto wetting and related devices, wherein two fluids, one of which is magnetically susceptible, are in contact over a meniscus. The shape of the meniscus is controlled by means of an applied magnetic field gradient. The contact angle between the chamber wall and the meniscus is a conserved. Implementation of special shaping to the internal or external walls of the chamber, while conserving the contact angle, results in better lens shape in the variable focus lens and lower levels of lens distortion.

Abstract: In an example embodiment, a magnetic sensor has a magnet and a magneto-resistive element, arranged on a substrate such that magnetic field lines through the magneto-resistive element are substantially parallel to a plane of the substrate. Movement of a movable magnetically permeable element (MMPE) near the substrate is detected as it alters the number of field lines through the element. The MMPE can be more sensitive than devices arranged with perpendicular field lines, and can be easier to manufacture and integrate. Applications include analog pointers, pressure sensors and microphones. The MMPE can use magnets placed either side of the element to detect changes in size of a gap above the element. As the gap closes, less of the parallel oriented field passes through the magneto resistive element.