Abstract: An automatic trigger circuit including: a two-arm current mirror including a first arm connected between a DC electrical supply and a ground, the first arm including a first transistor including a first source connected to the DC electrical supply, a first gate, and a first drain connected to the first gate; a second transistor including a second gate connected to the DC electrical supply, a second drain connected to the first drain and a second source; a third transistor including a third drain connected to the second source, a third gate for receiving a first level reference voltage, and a third source; and a fourth transistor including a fourth drain connected to the third source and a fourth source connected to the ground; and a second arm connected between the DC electrical supply and the ground, the second arm including a fifth transistor including a fifth source connected to the DC electrical supply, a fifth gate connected to the first gate and a fifth drain; and a sixth transistor including a sixth dr

Abstract: In a memory card designed to count down a number of units by successive programming of non-volatile, electrically erasable and electrically programmable memory cells, the memory is organized into N rows of P cells, the weight of the cells of one row in the account being P times the weight of the next-ranking row. The countdown procedure is recurrent and consists in making a search, in scanning the memory according to the rising order of weights, of an erased cell, programming this cell and an erased cell and then erasing the entire row having an immediately lower rank unless the erased cell is located in the first row, and in recommencing this recurrent procedure until an erased cell is found in the first line. The auxiliary cell enables the detection of an abnormal interruption of the recurrent procedure and the restoring of the exact account of the memory which could have been distorted by this abnormal interruption.

Abstract: Disclosed is an integrated circuit comprising an electrically erasable programmable memory, the cells of which comprise a transistor with floating gate which is series connected with an access transistor, wherein, in order to prevent deterioration in the information stored in the transistors with floating gates, due to an excessive read voltage being applied to the cell, the circuit has, firstly, an additional cell constituted like the other cells and programmed in a state where its transistor with floating gate cannot be made conductive, the gate and the source of the transistor with floating gate of the additional cell being grounded, the drain and the gate of the access transistor receiving the memory reading voltage, and, secondly, a threshold comparator connected to the drain of the floating gate transistor to compare the voltage on this drain with the reading voltage and to give a signal in the event of any abnormal drop in the voltage at the drain.