Patents by Inventor Jacek Baranowski

Jacek Baranowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity
    Patent number: 6329215
    Abstract: The subject of the Invention is the method of fabrication of nitride semiconductor A3B5 such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors.
    Type: Grant
    Filed: December 6, 1999
    Date of Patent: December 11, 2001
    Assignee: Centrum Badan Wysokocisnieniowych Polskiej Akademii Navk
    Inventors: Sylwester Porowski, Jan Jun, Tadeusz Suski, Czeslaw Skierbiszewski, Michal Leszczynski, Izabella Grzegory, Henryk Teisseyre, Jacek Baranowski, Elzbieta Litwin-Staszewska