Abstract: Techniques for measuring a contact potential difference of a sample at an elevated temperature using a probe designed for room temperature measurement are disclosed. In such measurements, probe damage by excessive heating can be prevented without any probe modifications to include probe cooling. This can be achieved by minimizing the time the probe spends in close proximity to the heated sample. Furthermore, the effect of probe heating by the sample on the probe reading can be corrected by including an additional contact potential difference measurement of a reference plate kept at room temperature in the measurement cycle.

Abstract: Techniques for measuring a contact potential difference of a sample at an elevated temperature using a probe designed for room temperature measurement are disclosed. In such measurements, probe damage by excessive heating can be prevented without any probe modifications to include probe cooling. This can be achieved by minimizing the time the probe spends in close proximity to the heated sample. Furthermore, the effect of probe heating by the sample on the probe reading can be corrected by including an additional contact potential difference measurement of a reference plate kept at room temperature in the measurement cycle.

Abstract: A device for measuring photoinduced electrical properties at a semiconductor sample surface. The device includes an analysis probe having a means for directing a light beam to a defined portion of a semiconductor substrate surface. A probe electrode is provided for detecting a photo-induced electrical signal from the defined portion of the semiconductor substrate, and a light blocking means is carried by the probe for substantially blocking stray light from the defined portion of the substrate surface. A positioning means for positioning the semiconductor and device with respect to each other for measurement of the photo-induced electrical property at a desired defined portion of the semiconductor substrate surface. The positioning means may be adapted to position respectively the wafer and probe without contact between the wafer and probe and to position the wafer with respect to a chuck without contacting the chuck.

Abstract: This invention relates to the measurement of the minority carrier diffusion length of a semiconductor sample to evaluate the contaminant impurities which reduce the carrier lifetime.