Abstract: The present application provides a device and methods of making and using these devices. The devices comprise porous caps and porous vents made from sintered porous polymeric media comprising plastic particles, elastomeric particles or a combination thereof. These devices are used with medical devices or components thereof to provide ease of use, resistance to infection, sterilization and venting.

Abstract: Systems and methods are provided to assist a user with contact lens usage. The system includes a virtualization apparatus on a communication device for use by the contact lens user. The virtualization apparatus includes a front mirror with optical sensor and a side mirror in reflective communication with another optical sensor. The mirrors reflect images of the contact lens user during a contact lens training and support session and the user communication device communicates with a remote trainer or compliance monitor. The method is directed to a trainer or compliance monitor remotely training or monitoring a contact lens user utilizing the systems in accordance with the principles of the invention.

Abstract: The present application provides a device and methods of making and using these devices. The devices comprise porous caps and porous vents made from sintered porous polymeric media comprising plastic particles, elastomeric particles or a combination thereof. These devices are used with medical devices or components thereof to provide ease of use, resistance to infection, sterilization and venting.

Abstract: A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate including a tensile-strained SiGe alloy layer located atop an insulating layer; and a strained Si layer atop the tensile-strained SiGe alloy layer. The present invention also provides a method of forming the tensile-strained SGOI substrate as well as the heterostructure described above. The method of the present invention decouples the preference for high strain in the strained Si layer and the Ge content in the underlying layer by providing a tensile-strained SiGe alloy layer directly atop on an insulating layer.