Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.

Abstract: The invention is embodied in a system for diabetes management including a medical device (MD) and a consumer electronic device (CED). The CED may be used to monitor and/or control the MD. In particular embodiments, the system may include a connector that plugs into the CED to allow communication between the MD and the CED. The medical device may be an external infusion device, implantable pump, glucose meter, glucose monitor, continuous glucose monitoring system, or the like. The CED may be any type of consumer electronic device including, but not limited to, cellular phones, personal digital assistants (PDAs), BlackBerry, Smartphones, pocketpc phones, mp3 players, radios, CD players, and the like.