Patents by Inventor Jack E. Murray

Jack E. Murray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11791252
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: October 17, 2023
    Inventors: Owen R. Fay, Jack E. Murray
  • Publication number: 20220293506
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Application
    Filed: June 1, 2022
    Publication date: September 15, 2022
    Inventors: Owen R. Fay, Jack E. Murray
  • Publication number: 20220028771
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Application
    Filed: October 4, 2021
    Publication date: January 27, 2022
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 11139229
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: October 5, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 10825762
    Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: November 3, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Brandon P. Wirz, Jack E. Murray
  • Patent number: 10825761
    Abstract: An electronic device includes a substrate, a structure over the substrate having an edge wall defining at least a portion of an opening exposing a surface of the substrate, and a dielectric material adjacent and in contact with the edge wall and an adjacent portion of the surface of the substrate. The dielectric material has a profile tapering downward from adjacent the edge wall toward the substrate. Other electronic devices include a substrate and a solder mask over the substrate. The solder mask defines an opening therethrough. A supplemental mask is within the opening of the solder mask, and has a sidewall that slopes away from the solder mask. A conductive structure is adjacent and in contact with at least one of the solder mask or the supplemental mask.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: November 3, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Brandon P. Wirz, Jack E. Murray
  • Publication number: 20190363044
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Application
    Filed: August 9, 2019
    Publication date: November 28, 2019
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 10381297
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: August 13, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 10276479
    Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: April 30, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Brandon P. Wirz, Jack E. Murray
  • Publication number: 20190109080
    Abstract: An electronic device includes a substrate, a structure over the substrate having an edge wall defining at least a portion of an opening exposing a surface of the substrate, and a dielectric material adjacent and in contact with the edge wall and an adjacent portion of the surface of the substrate. The dielectric material has a profile tapering downward from adjacent the edge wall toward the substrate. Other electronic devices include a substrate and a solder mask over the substrate. The solder mask defines an opening therethrough. A supplemental mask is within the opening of the solder mask, and has a sidewall that slopes away from the solder mask. A conductive structure is adjacent and in contact with at least one of the solder mask or the supplemental mask.
    Type: Application
    Filed: November 27, 2018
    Publication date: April 11, 2019
    Inventors: Brandon P. Wirz, Jack E. Murray
  • Publication number: 20190109081
    Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.
    Type: Application
    Filed: November 27, 2018
    Publication date: April 11, 2019
    Inventors: Brandon P. Wirz, Jack E. Murray
  • Publication number: 20190109079
    Abstract: Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.
    Type: Application
    Filed: October 11, 2017
    Publication date: April 11, 2019
    Inventors: Brandon P. Wirz, Jack E. Murray
  • Publication number: 20180315689
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Application
    Filed: July 3, 2018
    Publication date: November 1, 2018
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 10032703
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: July 24, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Owen R. Fay, Jack E. Murray
  • Publication number: 20160343690
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Application
    Filed: August 5, 2016
    Publication date: November 24, 2016
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 9418926
    Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: August 16, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Owen R. Fay, Jack E. Murray
  • Patent number: 6227076
    Abstract: Wrench structure for placement on over a generally circular workpiece in either a lateral or an axial direction and having a drive head with a cavity formed by a base member and an access cap, a bore formed thru the base member and cap around a rotational axis for accommodating the workpiece, a plurality of gripping jaws pivotally mounted within the cavity and arranged in a substantially circular pattern around the rotational axis and having gripping faces extending at least partially into the bore, each face being knurled and formed substantially on a radius line which makes an angle from about 6.0° to about 25° with a longitudinal axis of the jaw at a lateral midpoint of the face, and each face thereby having a neutral contact portion and a working contact portion.
    Type: Grant
    Filed: February 5, 2000
    Date of Patent: May 8, 2001
    Inventor: Jack E. Murray