Abstract: A method for producing seed corn from the corn plants, for use in growing subsequent corn plants, includes measuring a moisture content of corn kernels on ears of the corn plants in the field and removing, by a combine harvester, the ears of corn from the corn plants when the moisture content satisfies a threshold moisture content. The method then includes separating the corn kernels from cobs of the ears of corn onboard the combine harvester and collecting the separated corn kernels for use as seed corn, whereby one or more subsequent corn plants can be grown from the collected corn kernels.

Abstract: Combine harvesters are provided for use in harvesting seed corn from corn plants in fields. In connection therewith, a method for producing such seed corn from the corn plants, for use in growing subsequent corn plants, includes measuring a moisture content of corn kernels on ears of the corn plants in the field and removing, by one of the combine harvesters, the ears of corn from the corn plants when the moisture content satisfies a threshold moisture content. The method then includes separating the corn kernels from cobs of the ears of corn onboard the combine harvester and collecting the separated corn kernels for use as seed corn, whereby one or more subsequent corn plants can be grown from the collected corn kernels.

Abstract: An electrostatic discharge (ESD) protection device includes a first-type substrate, a second-type well formed in the substrate and a first-type well formed in the substrate. The second-type well includes a second-type+ region formed between first and second first-type+ regions. The first-type well is formed in the substrate adjacent a first side of the second-type well. The first-type well includes first and second first-type regions with a first-type+ region and a second-type+ region formed between the first and second first-type regions. The second-type+ region of the first-type well is formed between the first-type+ region of the first-type well and the second-type well.

Abstract: An integrated circuit (IC) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The IC also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket and a first-type+ ring formed through the first-type epitaxial pocket between the second-type+ isolation ring and the DMOS cell.

Abstract: A protection device for handling energy transients includes a plurality of basic unit Zener diodes connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes is formed in a first-type substrate. Each of the basic unit Zener diodes comprises a second-type well formed in the substrate, a second-type Zener region formed in the second-type well and a first-type+ region formed over the second-type Zener region between a first and second second-type+ region.