Abstract: A manufacturing method of a complementary metal oxide semiconductor includes steps as following: providing a semiconductor substrate; forming a metal oxide semiconductor region having an oxide layer, which has a thickness greater than 1 micrometer, on a first surface of the semiconductor substrate; forming the oxide layer as an isolation region of the metal oxide semiconductor region and a heat-isolation region of a poly heater; forming a poly gate of the metal oxide semiconductor region as at least a portion of the poly heater; forming an interlayer dielectric layer; and processing a selenium etching. Under this circumstance, the oxide layer is applied so as to be the isolation region of the metal oxide semiconductor region and a heat-isolation region of the poly heater, the poly gate of the metal oxide semiconductor region is sufficiently utilized as the poly heater, and the heat-dissipation of the poly heater is optimized.

Abstract: A system for reducing flickers in converting non-interlaced video signals to interlaced video signals is disclosed. The non-interlaced video signals are first modified by two independent adjustable parameters, each having a different weight on the received signals. A FIFO line buffer is used to delay respectively and alternatively the two modified signals to generate a portion of output signals. The final output interlaced signals are generated by combining the delayed signal from the FIFO line buffer with one of the two modified signals. As a result and for the first time, only one FIFO line buffer is used in such system for producing a converted interlaced signal with minimum visual errors in video signal conversions.