Patents by Inventor Jack Josefowicz

Jack Josefowicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single-ended primary inductance converter (SEPIC) based power supply for driving multiple strings of light emitting diodes (LEDs) in roadway lighting fixtures
    Patent number: 8624500
    Abstract: A lighting fixture and power supply are provided that allows a power factor correction (PFC) single ended primary inductance controller (SEPIC) that provides a controlled voltage output to provide a constant current to an LED load. The power supply provides an efficient and stable power supply for LEDs. Multiple power supplies can be provided on the same printed circuit board to control multiple LED channels.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: January 7, 2014
    Assignee: LED Roadway Lighting Ltd
    Inventors: Jack Josefowicz, Shawn Winters, Donald Church
  • SINGLE-ENDED PRIMARY INDUCTANCE CONVERTER (SEPIC) BASED POWER SUPPLY FOR DRIVING MULTIPLE STRINGS OF LIGHT EMITTING DIODES (LEDS) IN ROADWAY LIGHTING FIXTURES
    Publication number: 20120280617
    Abstract: A lighting fixture and power supply are provided that allows a power factor correction (PFC) single ended primary inductance controller (SEPIC) that provides a controlled voltage output to provide a constant current to an LED load. The power supply provides an efficient and stable power supply for LEDs. Multiple power supplies can be provided on the same printed circuit board to control multiple LED channels.
    Type: Application
    Filed: August 9, 2010
    Publication date: November 8, 2012
    Inventors: Jack Josefowicz, Shawn Winters, Donald Church
  • Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
    Patent number: 5079179
    Abstract: A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The head group of the L-B molecule is chosen so that it passivates the surface states of the particular GaAs substrate being used. Certain preferred acids and amino head groups are disclosed. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surfaces defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.
    Type: Grant
    Filed: November 27, 1990
    Date of Patent: January 7, 1992
    Assignee: Hughes Aircraft Company
    Inventors: Jack Josefowicz, David Rensch, Vladimir Rodov, Meir Bartur, Debra Marr-Leisy