Patents by Inventor Jack Jyh-Kau Chang

Jack Jyh-Kau Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160314811
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. The onset layer is formed directly on a ruthenium underlayer stack having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively low pressure. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Mark F. Mercado, Mohammad T. Mirzamaani, Kai Tang
  • Patent number: 9412404
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: August 9, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Mark F. Mercado, Mohammad T. Mirzamaani, Kai Tang
  • Patent number: 9245564
    Abstract: According to one embodiment, a soft underlayer structure includes a coupling layer, at least one outer soft underlayer positioned above and below the coupling layer, and at least one inner soft underlayer positioned above and below the coupling layer between the coupling layer and the associated outer soft underlayer, where the inner soft underlayers have a saturation magnetic flux density and/or a thickness that is different than a saturation magnetic flux density and/or a thickness of the outer soft underlayers.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: January 26, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Thomas C. Arnoldussen, Jack Jyh-Kau Chang, Arien M. Ghaderi, Zhupei Shi
  • Publication number: 20150310884
    Abstract: According to one embodiment, a soft underlayer structure includes a coupling layer, at least one outer soft underlayer positioned above and below the coupling layer, and at least one inner soft underlayer positioned above and below the coupling layer between the coupling layer and the associated outer soft underlayer, where the inner soft underlayers have a saturation magnetic flux density and/or a thickness that is different than a saturation magnetic flux density and/or a thickness of the outer soft underlayers.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 29, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Thomas C. Arnoldussen, Jack Jyh-Kau Chang, Arien M. Ghaderi, Zhupei Shi
  • Patent number: 8747628
    Abstract: A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: June 10, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Patent number: 8580409
    Abstract: Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: November 12, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Zhupei Shi
  • Publication number: 20120186974
    Abstract: A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Application
    Filed: April 3, 2012
    Publication date: July 26, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Patent number: 8168310
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: May 1, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Publication number: 20110141609
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 16, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Mark F. Mercado, Mohammad T. Mirzamaani, Kai Tang
  • Publication number: 20110141621
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 16, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Publication number: 20110111261
    Abstract: Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
    Type: Application
    Filed: November 9, 2009
    Publication date: May 12, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Zhupei Shi
  • Publication number: 20020132139
    Abstract: A magnetic recording medium having a dual magnetic structure layer for the separate control of KuV/kT and SNR to achieve high SNR, increased overwrite (OW) capability and good thermal stability. The magnetic recording medium includes a nonmagnetic Al—Mg substrate followed by the addition of a NiP layer electrolessly plated on the surface of the substrate. A dual-film magnetic layer is formed on the substrate. The dual-film magnetic structure comprises an upper first magnetic film of CoCrPtB alloy and a lower second magnetic film of a CoCrPtTaB alloy. The composition and thickness of each magnetic film in the dual-film magnetic structure allows for the simultaneous ability of the magnetic recording medium to obtain high SNR, increased OW capability and good thermal stability to improve the overall performance of the media.
    Type: Application
    Filed: January 5, 2001
    Publication date: September 19, 2002
    Inventors: Jack Jyh-Kau Chang, Yi-Hong Huang, Wu-Sun Wang, Chun-Lee Liang, I-An Chen, Lu-Mei Liang