Patents by Inventor Jack R. MORRISH

Jack R. MORRISH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period
    Patent number: 9911492
    Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: March 6, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chung H. Lam, Scott C. Lewis, Thomas M. Maffitt, Jack R. Morrish
  • Writing multiple levels in a phase change memory
    Patent number: 9502107
    Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: November 22, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chung H. Lam, Scott C. Lewis, Thomas M. Maffitt, Jack R. Morrish
  • WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
    Publication number: 20150364194
    Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.
    Type: Application
    Filed: August 25, 2015
    Publication date: December 17, 2015
    Inventors: Chung H. Lam, Scott C. Lewis, Thomas M. Maffitt, Jack R. Morrish
  • WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
    Publication number: 20150206582
    Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 23, 2015
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chung H. LAM, Scott C. LEWIS, Thomas M. MAFFITT, Jack R. MORRISH