Abstract: A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the first and second areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in the first and second areas, forming a protective layer in the first and second areas and then removing the second conductive layer from the third area, then forming blocks of conductive material in the third area, then etching in the first and second areas to form select and HV gates, and replacing the blocks of conductive material with blocks of metal material.

Abstract: A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material.

Abstract: A method of forming memory cells, HV devices and logic devices on a substrate, including recessing the upper surface of the memory cell and HV device areas of the substrate, forming a polysilicon layer in the memory cell and HV device areas, forming first trenches through the first polysilicon layer and into the silicon substrate in the memory cell and HV device areas, filling the first trenches with insulation material, forming second trenches into the substrate in the logic device area to form upwardly extending fins, removing portions of the polysilicon layer in the memory cell area to form floating gates, forming erase and word line gates in the memory cell area, HV gates in the HV device area, and dummy gates in the logic device area from a second polysilicon layer, and replacing the dummy gates with metal gates that wrap around the fins.

Abstract: A method of forming memory cells, HV devices and logic devices on a substrate, including recessing the upper surface of the memory cell and HV device areas of the substrate, forming a polysilicon layer in the memory cell and HV device areas, forming first trenches through the first polysilicon layer and into the silicon substrate in the memory cell and HV device areas, filling the first trenches with insulation material, forming second trenches into the substrate in the logic device area to form upwardly extending fins, removing portions of the polysilicon layer in the memory cell area to form floating gates, forming erase and word line gates in the memory cell area, HV gates in the HV device area, and dummy gates in the logic device area from a second polysilicon layer, and replacing the dummy gates with metal gates that wrap around the fins.

Abstract: A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material.

Abstract: A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the first and second areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in the first and second areas, forming a protective layer in the first and second areas and then removing the second conductive layer from the third area, then forming blocks of conductive material in the third area, then etching in the first and second areas to form select and HV gates, and replacing the blocks of conductive material with blocks of metal material.

Abstract: An energy-saving seawater desalination device using power generated in complementary cooperation of wind energy and light energy, and a control method are provided. The device comprises an electrical control cabinet, a photovoltaic power generation component, a wind power generation component, an energy storage device, an electric heater, etc. The present invention supplies power for power loads of a seawater desalination system through solar power generation and wind power generation in a grid-connected system, and cooperates with the traditional power grid to maximize and localize the utilization of new energy power and reduce the waste of resources. In an off-grid system, the photovoltaic power generation component and the wind power generation component convert redundant power into other forms of energy resources for energy storage through a battery or an electric heater under the condition that the generating capacity is enough.

Abstract: An energy-saving seawater desalination device using power generated in complementary cooperation of wind energy and light energy, and a control method are provided. The device comprises an electrical control cabinet, a photovoltaic power generation component, a wind power generation component, an energy storage device, an electric heater, etc. The present invention supplies power for power loads of a seawater desalination system through solar power generation and wind power generation in a grid-connected system, and cooperates with the traditional power grid to maximize and localize the utilization of new energy power and reduce the waste of resources. In an off-grid system, the photovoltaic power generation component and the wind power generation component convert redundant power into other forms of energy resources for energy storage through a battery or an electric heater under the condition that the generating capacity is enough.

Abstract: Disclosed is a system and method for automated serving of one or more items. According to the system and method, a central controller may initially capture order details associated to an order placed by a user for serving an item. A control system may trigger one or more item producing components along with a robot unit to collectively process the order in order to produce the item based upon the order details. Further, the control system may determine a hold zone position available from multiple hold zone positions in a predefined hold zone for holding the item corresponding to the order. Further, the robot unit may move the item produced corresponding to the order in the said hold zone position of the hold zone. The robot unit may dispense the item from the said hold zone position into a delivery bay engine thereby serving the item to the user.

Abstract: The current invention provides a pressurizing liquid delivery device comprising of: a cover used to screw tight and connect a sealed container to form a sealed shape, or to loosen or release the sealed container to form a released shape so that liquid can be inputted or the pressure can be reduced, an inlet end and an outlet end is installed on the cover respectively, and the two ends of the inlet end are connected respectively to first and second gas delivery tube, and the outlet end has two ends connected respectively to first and second liquid delivery tube; a ball pressurizing device used to provide pressurized gas source and is connected to first gas delivery tube; a gas filtering device, connected and installed at near end of first gas delivery tube; a check valve, penetrated and inserted in the upper medium section of second gas delivery tube to provide a channel between ball pressurizing device and the inside of sealed container, it only allows gas be injected into the sealed container and stops the b

Abstract: An optical rotation encoder for an X-Y direction input device includes a light source for emitting therefrom a light, a pair of substantially vertically aligned light responsive elements for receiving the light, and a circular code wheel mounted between the light source and the light responsive elements, provided thereon plural equiangularly distributed apertures every adjacent two of which have a shielding sectorial area and having a first desired distance with respect to the light source and a second desired distance with respect to the light responsive elements for obtaining an X-Y displacement of the input device by plural pulses resulting from the light which is to be received by the light responsive elements and passes through the apertures to be intermittently projected on the light responsive elements when the circular code wheel is in a rotating motion, wherein the light source is a point light source and either the aperture or shielding sectorial area has a width smaller than a combined width of the