Patents by Inventor Jack Van Den Heuvel
Jack Van Den Heuvel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9136060Abstract: A method of fabricating a capacitor in a semiconductor substrate. The semiconductor substrate is doped to have a low resistivity. A second electrode, insulated from a first electrode, is formed over a front side surface and connected by a metal-filled via to the back side surface. The via may be omitted and the second electrode may be in electrical contact with the substrate or may be formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor is provided by a pair of oppositely-directed diodes formed in the substrate connected in parallel with the capacitor. Capacitance is increased while maintaining a low effective series resistance. Electrodes include a plurality of fingers, which are interdigitated with the fingers of other electrode. The capacitor is fabricated in a wafer-scale process with other capacitors, where capacitors are separated from each other by a dicing technique.Type: GrantFiled: December 28, 2007Date of Patent: September 15, 2015Assignee: VISHAY-SILICONIXInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 8324711Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: March 30, 2011Date of Patent: December 4, 2012Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 8004063Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: November 16, 2006Date of Patent: August 23, 2011Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20110176247Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: March 30, 2011Publication date: July 21, 2011Applicant: VISHAY INTERTECHNOLOGY, INC.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20100295152Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: November 16, 2006Publication date: November 25, 2010Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20080108202Abstract: A method of fabricating a capacitor in a semiconductor substrate. The semiconductor substrate is doped to have a low resistivity. A second electrode, insulated from a first electrode, is formed over a front side surface and connected by a metal-filled via to the back side surface. The via may be omitted and the second electrode may be in electrical contact with the substrate or may be formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor is provided by a pair of oppositely-directed diodes formed in the substrate connected in parallel with the capacitor. Capacitance is increased while maintaining a low effective series resistance. Electrodes include a plurality of fingers, which are interdigitated with the fingers of other electrode. The capacitor is fabricated in a wafer-scale process with other capacitors, where capacitors are separated from each other by a dicing technique.Type: ApplicationFiled: December 28, 2007Publication date: May 8, 2008Applicant: VISHAY-SILICONIXInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 7151036Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: June 5, 2003Date of Patent: December 19, 2006Assignee: Vishay-SiliconixInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 6621143Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: July 29, 2002Date of Patent: September 16, 2003Assignee: Vishay Intertechnology, IncInventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 6621142Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: July 29, 2002Date of Patent: September 16, 2003Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20030057517Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: July 29, 2002Publication date: March 27, 2003Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Patent number: 6538300Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: GrantFiled: September 14, 2000Date of Patent: March 25, 2003Assignee: Vishay Intertechnology, Inc.Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel
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Publication number: 20030030125Abstract: A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor.Type: ApplicationFiled: July 29, 2002Publication date: February 13, 2003Inventors: Haim Goldberger, Sik Lui, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel