Patents by Inventor Jack Y. Jau
Jack Y. Jau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9035674Abstract: The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.Type: GrantFiled: December 12, 2011Date of Patent: May 19, 2015Assignee: HERMES MICROVISION, INC.Inventors: Hong Xiao, Jack Y. Jau, Chang Chun Yeh
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Patent number: 8748815Abstract: A method and system for detecting or reviewing defective contacts on a semiconductor device are disclosed. In a first embodiment, the method and system comprise providing a positive charge sufficient enough to turn on a gate of an associated MOS device and scanning an area of interest within the MOS device with a primary electron beam of proper landing energy to generate image. The method and system include analyzing the signal of contacts and identify the open contacts. In a second embodiment, the method and system comprises pre-scanning or irradiating the wafer surface defect with an accessory beam, a plurality of times, to achieve positive charged/sufficient to turn on the gate on the associated MOS devices of the wafer; and scanning the at least a portion of the device circuits with a primary electron beam of proper landing energy to generate images wafer or area of interest. The method and system include analyzing the signal and/or image of contacts and identify the open contacts.Type: GrantFiled: August 31, 2006Date of Patent: June 10, 2014Assignee: Hermes Microvision, Inc.Inventors: Frederick Y. Zhao, Jack Y. Jau
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Publication number: 20120083055Abstract: The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.Type: ApplicationFiled: December 12, 2011Publication date: April 5, 2012Applicant: Hermes-Microvision, Inc.Inventors: Hong XIAO, Jack Y. JAU, Chang Chun YEH
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Patent number: 8010307Abstract: A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction. A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).Type: GrantFiled: December 5, 2007Date of Patent: August 30, 2011Assignee: Hermes-Microvision, Inc.Inventors: Wei Fang, Jack Y. Jau, Hong Xiao
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Publication number: 20090080763Abstract: A method and system for the classifying of defects in a device is disclosed. The method and system comprises directly classifying samples based upon a feature space; and creating knowledge from the samples of a feature group within the feature space for a supervised classifier. Finally, the method and system includes selecting features to create a best feature group from the feature space for a particular classification of defects. A visual classifier in accordance with the present invention is utilized in three different ways to improve speed and accuracy of the classification. First, the visual classifier directly classifies data. Second, the visual classifier can help to create knowledge about the defects quickly and correctly. Third, a feature selection process is also performed by the visual classifier in accordance with the present invention.Type: ApplicationFiled: November 25, 2008Publication date: March 26, 2009Applicant: HERMES MICROVISION, INCInventors: JACK Y. JAU, ZHAOLI ZHANG, WEI FANG
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Publication number: 20080265251Abstract: The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.Type: ApplicationFiled: April 25, 2008Publication date: October 30, 2008Applicant: Hermes-Microvision, Inc.Inventors: Hong XIAO, Jack Y. JAU, Chang Chun YEH
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Publication number: 20080215276Abstract: A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction. A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).Type: ApplicationFiled: December 5, 2007Publication date: September 4, 2008Applicant: Hermes Microvision, Inc.Inventors: Wei Fang, Jack Y. Jau, Hong Xiao
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Publication number: 20080175468Abstract: A method and system for creating knowledge and selecting features in a supervised classifier is disclosed. The method and system comprises changing a feature space of a plurality of defects and marking at least a portion of the samples of the defects in the feature space. The method and system includes labeling the at least a portion of the samples as training samples, determining if the training samples are of the same type and creating knowledge based upon the training samples if the samples are of the same type.Type: ApplicationFiled: January 24, 2007Publication date: July 24, 2008Applicant: HERMES MICROVISION, INC.Inventors: Jack Y. Jau, Zhaoli Zhang, Wei Fang
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Publication number: 20080054931Abstract: A method and system for detecting or reviewing defective contacts on a semiconductor device are disclosed. In a first embodiment, the method and system comprise providing a positive charge sufficient enough to turn on a gate of an associated MOS device and scanning an area of interest within the MOS device with a primary electron beam of proper landing energy to generate image. The method and system include analyzing the signal of contacts and identify the open contacts. In a second embodiment, the method and system comprises pre-scanning or irradiating the wafer surface defect with an accessory beam, a plurality of times, to achieve positive charged/sufficient to turn on the gate on the associated MOS devices of the wafer; and scanning the at least a portion of the device circuits with a primary electron beam of proper landing energy to generate images wafer or area of interest. The method and system include analyzing the signal and/or image of contacts and identify the open contacts.Type: ApplicationFiled: August 31, 2006Publication date: March 6, 2008Inventors: Frederick Y. Zhao, Jack Y. Jau
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Patent number: 6881956Abstract: An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by bending the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photomask.Type: GrantFiled: August 26, 2003Date of Patent: April 19, 2005Assignee: Hermes-Microvision, Inc.Inventors: Jack Y. Jau, Zhongwei Chen
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Patent number: 6710342Abstract: An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by deflecting the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photo mask.Type: GrantFiled: September 22, 2000Date of Patent: March 23, 2004Assignee: Hermes Microvision, Inc.Inventors: Jack Y. Jau, Zhong Wei Chen
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Patent number: 5717204Abstract: An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.Type: GrantFiled: February 26, 1996Date of Patent: February 10, 1998Assignee: KLA Instruments CorporationInventors: Dan Meisburger, Alan D. Brodie, Zhong-Wei Chen, Jack Y. Jau
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Patent number: 5665968Abstract: There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.Type: GrantFiled: February 26, 1996Date of Patent: September 9, 1997Assignee: KLA Instruments CorporationInventors: Dan Meisburger, Alan D. Brodie, Zhong-Wei Chen, Jack Y. Jau, Brian J. Grenon
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Patent number: 5502306Abstract: There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means.Type: GrantFiled: March 17, 1994Date of Patent: March 26, 1996Assignee: KLA Instruments CorporationInventors: Dan Meisburger, Alan D. Brodie, Curt Chadwick, Anil Desai, Hans Dohse, Dennis Emge, John Greene, Ralph Johnson, Ming-Yie Ling, John McMurtry, Barry Becker, Ray Paul, Mike Robinson, Richard Simmons, David E. A. Smith, John Taylor, Lee Veneklasen, Dean Walters, Paul Wieczorek, Sam Wong, April Dutta, Surendra Lele, Kirkwood Rough, Henry Pearce-Percy, Jack Y. Jau, Chun C. Lin, Hoi T. Nguyen, Yen-Jen Oyang, Timothy L. Hutcheson, David J. Clark, Chung-Shih Pan, Chetana Bhaskar, Chris Kirk, Eric Munro