Abstract: A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer.

Abstract: A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer.

Abstract: A conductive pattern film substrate and manufacturing method for combining two anisotropic materials, namely a patterned body and a film layer, without assistance from an intermediate layer. The method includes producing a thermal spraying source for performing a heating operation on a film material to prepare the film material for thermal spraying or semi-thermal spraying and thereby decompose the film material into film particles; and spraying the film particles to a pattern layer disposed on the body and having the pattern by the thermal spraying source to form the film layer having the film particle on the pattern layer, thereby enabling the body to embody electrical characteristics of the pattern.

Abstract: A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

Abstract: A secondary optical lamp guard includes an upper half portion, two clamp portions and a lower half portion, and the upper half portion has a plurality of optical refractive angles formed on an internal side of the upper half portion for improving the effect of the optical refractive angles, and the upper half portion and the lower half portion are processed by a plasma treatment to produce nanoscale holes for facilitating the dissipation of heat generated by a light source.

Abstract: A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

Abstract: A secondary optical lamp guard includes an upper half portion, two clamp portions and a lower half portion, and the upper half portion has a plurality of optical refractive angles formed on an internal side of the upper half portion for improving the effect of the optical refractive angles, and the upper half portion and the lower half portion are processed by a plasma treatment to produce nanoscale holes for facilitating the dissipation of heat generated by a light source.