Patents by Inventor Jacky Huang
Jacky Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250117688Abstract: In some implementations, a device may receive an input for a first prediction model. The device may execute, using the input, the first prediction model to generate a set of outputs, wherein the set of outputs is based on a set of inputs to a data processing pipeline associated with the first prediction model. The device may generate using a simulation engine and based on the set of outputs of the first prediction, a set of simulations of a set of results of implementing a set of actions associated with the first prediction model, wherein the set of simulations is associated with a simulated dataset representing a set of forecasts for simulating the set of results of implementing the set of actions. The device may output the simulated dataset to a model generation pipeline.Type: ApplicationFiled: October 5, 2023Publication date: April 10, 2025Inventors: Trijeet SETHI, Muralikumar VENKATASUBRAMANIAM, Arunkumar RAJAPPAN, Justin FLIETSTRA, Kunal CHUGH, Jacky Huang Zheng KWOK, Ralph DAVID
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Patent number: 11580426Abstract: Systems and methods for determining relative importance of one or more variables in a non-parametric model include: receiving, raw values of the variables corresponding to one or more entities; processing the raw values using a statistical model to obtain probability values for the variables and an overall prediction value for each entity; determining a plurality of cumulative distributions for the variables based on the raw values and the number of entities having a specific raw value; grouping the variables into a plurality of equally sized buckets based on the cumulative distributions; determining a mean probability value for each bucket; assigning a rank number for each bucket based on the mean probability values; compiling a table for the entities based on the raw values and the buckets corresponding to the raw values; and determining the relative importance of the variables for the entities based on the rank numbers.Type: GrantFiled: October 8, 2020Date of Patent: February 14, 2023Assignee: CAPITAL ONE SERVICES, LLCInventors: Ruoyo Shao, Kurt Adrian Wolf, Sang Jin Park, Jacky Huang Zheng Kwok, Cheng Jiang
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Publication number: 20210182706Abstract: Systems and methods for determining relative importance of one or more variables in a non-parametric model include: receiving, raw values of the variables corresponding to one or more entities; processing the raw values using a statistical model to obtain probability values for the variables and an overall prediction value for each entity; determining a plurality of cumulative distributions for the variables based on the raw values and the number of entities having a specific raw value; grouping the variables into a plurality of equally sized buckets based on the cumulative distributions; determining a mean probability value for each bucket; assigning a rank number for each bucket based on the mean probability values; compiling a table for the entities based on the raw values and the buckets corresponding to the raw values; and determining the relative importance of the variables for the entities based on the rank numbers.Type: ApplicationFiled: October 8, 2020Publication date: June 17, 2021Inventors: Ruoyo SHAO, Kurt Adrian WOLF, Sang Jin PARK, Jacky Huang Zheng KWOK, Cheng JIANG
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Patent number: 10832147Abstract: Systems and methods for determining relative importance of one or more variables in a non-parametric model include: receiving, raw values of the variables corresponding to one or more entities; processing the raw values using a statistical model to obtain probability values for the variables and an overall prediction value for each entity; determining a plurality of cumulative distributions for the variables based on the raw values and the number of entities having a specific raw value; grouping the variables into a plurality of equally sized buckets based on the cumulative distributions; determining a mean probability value for each bucket; assigning a rank number for each bucket based on the mean probability values; compiling a table for the entities based on the raw values and the buckets corresponding to the raw values; and determining the relative importance of the variables for the entities based on the rank numbers.Type: GrantFiled: December 17, 2019Date of Patent: November 10, 2020Assignee: CAPITAL ONE SERVICES, LLCInventors: Ruoyo Shao, Kurt Adrian Wolf, Sang Jin Park, Jacky Huang Zheng Kwok, Cheng Jiang
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Patent number: 8027529Abstract: A system for improving substrate critical dimension uniformity is described. The system includes an exposing means for exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits of focus ({Fj}) and exposure dose ({Ek}) for each of the first plurality of substrates to form a plurality of perturbed wafers. A measuring means is provided for measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers. An averaging means is provided for averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map. A second measuring means is provided for measuring a sidewall angle of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers.Type: GrantFiled: April 23, 2010Date of Patent: September 27, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shinn-Sheng Yu, Chih-Ming Ke, Jacky Huang, Chun-Kuang Chen, Tsai-Sheng Gau
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Patent number: 7787685Abstract: Methods and apparatus for measuring a critical dimension of an optically-anisotropic feature, including extracting a number of values each descriptive of the optically-anisotropic feature, including values corresponding to ordinary and extraordinary measurements of one or more optical characteristics of the optically-anisotropic feature. The optical characteristics can include the index of refraction and/or the extinction coefficient of the optically-anisotropic feature, among others. Additionally, the values can be input into an optical critical dimension (OCD) measurement model, such that the critical dimension can be verified via optical measurement based on the OCD measurement model. The optical measurement of the critical dimension can also be verified via scanning electron microscope (SEM) measurement.Type: GrantFiled: August 24, 2006Date of Patent: August 31, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jacky Huang, Chin-Ming Ke, Tsai-Sheng Gau
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Patent number: 7777884Abstract: A method and a system are provided for calibrating metrological tools used to measure features of a semiconductor device. A critical dimension (CD) ruler defines a known pitch plus a pitch offset. A photoresist layer is measured to determine a measured pitch whereupon the measured pitch is compared to the known pitch. From the comparison, appropriate calibration steps can be taken to reduce the difference between the known pitch and the measured pitch.Type: GrantFiled: January 23, 2007Date of Patent: August 17, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Ming Ke, Shinn-Sheng Yu, Yu-Hsi Wang, Jacky Huang, Tsai-Sheng Gau, Kuo-Chen Huang
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Publication number: 20100201961Abstract: A system for improving substrate critical dimension uniformity is described. The system includes an exposing means for exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits of focus ({Fj}) and exposure dose ({Ek}) for each of the first plurality of substrates to form a plurality of perturbed wafers. A measuring means is provided for measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers. An averaging means is provided for averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map. A second measuring means is provided for measuring a sidewall angle of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers.Type: ApplicationFiled: April 23, 2010Publication date: August 12, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shinn-Sheng Yu, Chih-Ming Ke, Jacky Huang, Chun-Kuang Chen, Tsai-Sheng Gau
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Patent number: 7732109Abstract: A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool.Type: GrantFiled: April 4, 2007Date of Patent: June 8, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shinn-Sheng Yu, Chih-Ming Ke, Jacky Huang, Chun-Kuang Chen, Tsai-Sheng Gau
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Patent number: 7580129Abstract: A method for improving accuracy of optical critical dimension measurement of a substrate is provided. A process parameter that influences the refractive index and extinction coefficient of a thin film in the substrate is identified. A refractive index and extinction coefficient across a plurality of wavelengths as a function of the process parameter is identified. During the regression modeling of the optical critical dimension measurement, the refractive index and extinction coefficient across the plurality of wavelengths is adjusted through the function via the process parameter.Type: GrantFiled: February 23, 2007Date of Patent: August 25, 2009Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Shinn-Sheng Yu, Jacky Huang, Chih-Ming Ke, Tsai-Sheng Gau
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Publication number: 20080248403Abstract: A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool.Type: ApplicationFiled: April 4, 2007Publication date: October 9, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shinn-Sheng Yu, Chih-Ming Ke, Jacky Huang, Chun-Kuang Chen, Tsai-Sheng Gau
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Publication number: 20080233487Abstract: Disclosed is a method and a system for optimizing lithography focus and/or energy using a specially-designed optical critical dimension pattern. A wafer comprising a plurality of photomasks is received. Critical dimension, line-end shortening, and side wall angle of the plurality of photomasks are measured using an integrated metrology equipment. A spectrum analysis is performed in a simulated spectra library to form analysis data. The analysis data is stored into a plurality of lookup tables of an optical critical dimension library. A lookup of the plurality of lookup tables is performed to determine a focus or energy of the wafer.Type: ApplicationFiled: March 21, 2007Publication date: September 25, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jacky Huang, Chih-Ming Ke, Shinn Sheng Yu, Tsai-Sheng Gau
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Publication number: 20080204730Abstract: A method for improving accuracy of optical critical dimension measurement of a substrate is provided. A process parameter that influences the refractive index and extinction coefficient of a thin film in the substrate is identified. A refractive index and extinction coefficient across a plurality of wavelengths as a function of the process parameter is identified. During the regression modeling of the optical critical dimension measurement, the refractive index and extinction coefficient across the plurality of wavelengths is adjusted through the function via the process parameter.Type: ApplicationFiled: February 23, 2007Publication date: August 28, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shinn-Sheng Yu, Jacky Huang, Chih-Ming Ke, Tsai-Sheng Gau
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Publication number: 20080174778Abstract: A method and a system are provided for calibrating metrological tools used to measure features of a semiconductor device. A critical dimension (CD) ruler defines a known pitch plus a pitch offset. A photoresist layer is measured to determine a measured pitch whereupon the measured pitch is compared to the known pitch. From the comparison, appropriate calibration steps can be taken to reduce the difference between the known pitch and the measured pitch.Type: ApplicationFiled: January 23, 2007Publication date: July 24, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Ming Ke, Shinn-Sheng Yu, Yu-Hsi Wang, Jacky Huang, Tsai-Sheng Gau, Kuo-Chen Huang
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Patent number: 7349086Abstract: A system for measuring optical properties of a sample is provided. A light source provides incident polarized light. A detector detects reflected light from the sample surface. A processor determines a first coefficient (R) of the reflected light detected by the detector, determines a second coefficient (n), extinction coefficient (k), and thickness of the film based on the measured first coefficient, and determines a first dielectric constant (?1) and a second dielectric constant (?2) of the film according to the second coefficient (n) and extinction coefficient (k).Type: GrantFiled: December 30, 2005Date of Patent: March 25, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Joung-Wei Liou, Jacky Huang, Chih-Ming Ke, Szu-An Wu
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Publication number: 20070242263Abstract: Methods and apparatus for measuring a critical dimension of an optically-anisotropic feature, including extracting a number of values each descriptive of the optically-anisotropic feature, including values corresponding to ordinary and extraordinary measurements of one or more optical characteristics of the optically-anisotropic feature. The optical characteristics can include the index of refraction and/or the extinction coefficient of the optically-anisotropic feature, among others. Additionally, the values can be input into an optical critical dimension (OCD) measurement model, such that the critical dimension can be verified via optical measurement based on the OCD measurement model. The optical measurement of the critical dimension can also be verified via scanning electron microscope (SEM) measurement.Type: ApplicationFiled: August 24, 2006Publication date: October 18, 2007Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jacky Huang, Chin-Ming Ke, Tsai-Sheng Gau
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Publication number: 20070153272Abstract: A system for measuring optical properties of a sample is provided. A light source provides incident polarized light. A detector detects reflected light from the sample surface. A processor determines a first coefficient (R) of the reflected light detected by the detector, determines a second coefficient (n), extinction coefficient (k), and thickness of the film based on the measured first coefficient, and determines a first dielectric constant (?1) and a second dielectric constant (?2) of the film according to the second coefficient (n) and extinction coefficient (k).Type: ApplicationFiled: December 30, 2005Publication date: July 5, 2007Inventors: Joung-Wei Liou, Jacky Huang, Chih-Ming Ke, Szu-An Wu
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Publication number: 20060222975Abstract: A method and apparatus for improving a yield and throughput of a lithographic process track, the method including providing a first resist layer on a first process wafer; forming a first resist pattern in the first resist layer including a heating process according to a first temperature profile wherein the heating process comprises a plurality of temperature controllable heating zones; producing and collecting scattered light spectra from the first resist pattern processing the scattered light spectrum to obtain 3-dimensional information including first resist pattern critical dimensions; determining a second temperature profile for performing the heating process to achieve targeted resist pattern critical dimensions including a second resist pattern on a second process wafer; and, forming the second resist pattern dimensions including the heating process according to the second temperature profile.Type: ApplicationFiled: April 2, 2005Publication date: October 5, 2006Inventors: Chih-Ming Ke, Shing-Shen Yu, Yu-Hsi Wang, Tsai-Sheng Gau, Jacky Huang