Abstract: A computational method and system for estimating port delays in a network may use a data-driven estimation with quadratic programming based on available network path data that is already collected. In this manner, port delays for each individual port in the network may be estimated without having to measure each individual port using sensors.

Abstract: A computational method and system for identifying bad ports in a network may use a neural network learning function based on available network path data that is already collected. In this manner, bad ports in the network may be identified without having to measure each individual port using sensors.

Abstract: A computational method and system for estimating port delays in a network may use a data-driven estimation with quadratic programming based on available network path data that is already collected. In this manner, port delays for each individual port in the network may be estimated without having to measure each individual port using sensors.

Abstract: A computational method and system for identifying bad ports in a network may use a neural network learning function based on available network path data that is already collected. In this manner, bad ports in the network may be identified without having to measure each individual port using sensors.

Abstract: A computer implemented method uses a system (100) for managing meetings. The system (100) has, a database (104) with data fields for entering a meeting definition of a future meeting as meeting definition data; a computer memory (106) storing the data for retrieval by the database (104); and an auto-mailer (108) sending an encrypted and read only meeting definition document and meeting reminders that are generated by the database (104) and sent by the auto-mailer (108) to notify meeting members identified by the data about a future meeting described by the data.

Abstract: The present invention provides a manufacturing method for a poly film with an anti-reflection rough surface is provided. The method comprises steps of, at first, a thin film is formed over a substrate, and a amorphous silicon layer is formed over the thin film. Next, in situ a first annealing procedure is performed over the amorphous silicon layer. The amorphous silicon layer is changed into a polysilicon layer with the anti-reflection rough surface. Next, in situ a second annealing procedure is selectively performed. The polysilicon layer with the anti-reflection rough surface is doped by reacting with a gas induced. Then, the thin film and the polysilicon layer with the anti-reflection rough surface is defined, whereby the poly film with an anti-reflection rough surface is formed over the substrate.

Abstract: The method of the present invention includes forming a MOS on a semiconductor substrate. Subsequently, a silicon-rich metal silicide layer is deposited on the MOS and substrate by using chemical vapor deposition to act as a silicon material source. Then, a thermal process is carried out to separate a portion of the silicon out of the metal silicide layer, thereby forming a silicon layer on top of the gate of the MOS, source/drain. The nest step is to remove the metal suicide layer. A self-aligned metal silicide layer is formed on the silicon layer.