Abstract: A silicon carbide semiconductor assembly and a method of forming a silicon carbide (SiC) semiconductor assembly are provided. The silicon carbide semiconductor assembly includes a semiconductor substrate and an electrode. The semiconductor substrate is formed of silicon carbide and includes a first surface, a second surface opposing the first surface, and a thickness extending therebetween. The method includes forming one or more electronic devices on the first surface and thinning the semiconductor substrate by removing the second surface to a predetermined depth of semiconductor substrate and leaving a third surface opposing the first surface. The method further includes forming a non-ohmic alloy layer on the third surface at a first temperature range and annealing the alloy layer at a second temperature range forming an ohmic layer, the second temperature range being greater than the first temperature range.

Abstract: A silicon carbide semiconductor assembly and a method of forming a silicon carbide (SiC) semiconductor assembly are provided. The silicon carbide semiconductor assembly includes a semiconductor substrate and an electrode. The semiconductor substrate is formed of silicon carbide and includes a first surface, a second surface opposing the first surface, and a thickness extending therebetween. The method includes forming one or more electronic devices on the first surface and thinning the semiconductor substrate by removing the second surface to a predetermined depth of semiconductor substrate and leaving a third surface opposing the first surface. The method further includes forming a non-ohmic alloy layer on the third surface at a first temperature range and annealing the alloy layer at a second temperature range forming an ohmic layer, the second temperature range being greater than the first temperature range.