Abstract: A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Abstract: A magnetic memory element has a Ru hard mask layer. The use of Ru advantageously allows for closer spacing of adjacent magnetic memory elements leading to increased data density. In addition, the use of Ru as a hard mask reduces parasitic electrical resistance by virtue of the fact that Ru does not oxidize in ordinary manufacturing environments. The magnetic memory element can be formed by depositing a plurality of memory element layers, depositing a Ru hard mask layer, depositing a RIEable layer over the Ru hard mask layer, and forming a photoresist mask over the hard mask layer. A reactive ion etching can be performed to transfer the image of the photoresist mask onto the RIEable layer to form a RIEable mask. An ion etching can then be performed to transfer the image of the RIAable mask onto the underlying Ru hard mask and underlying memory element layers.

Abstract: A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Abstract: A magnetic memory element has a Ru hard mask layer. The use of Ru advantageously allows for closer spacing of adjacent magnetic memory elements leading to increased data density. In addition, the use of Ru as a hard mask reduces parasitic electrical resistance by virtue of the fact that Ru does not oxidize in ordinary manufacturing environments. The magnetic memory element can be formed by depositing a plurality of memory element layers, depositing a Ru hard mask layer, depositing a RIEable layer over the Ru hard mask layer, and forming a photoresist mask over the hard mask layer. A reactive ion etching can be performed to transfer the image of the photoresist mask onto the RIEable layer to form a RIEable mask. An ion etching can then be performed to transfer the image of the RIAable mask onto the underlying Ru hard mask and underlying memory element layers.

Abstract: A magnetic memory element having a Ru hard mask layer. The use of Ru advantageously allows for closer spacing of adjacent magnetic memory elements leading to increased data density. In addition, the use of Ru as a hard mask reduces parasitic electrical resistance by virtue of the fact that Ru does not oxidize in ordinary manufacturing environments. The magnetic memory element can be formed by depositing a plurality of memory element layers, depositing a Ru hard mask layer, depositing a RIEable layer over the Ru hard mask layer, and forming a photoresist mask over the hard mask layer. A reactive ion etching can be performed to transfer the image of the photoresist mask onto the RIEable layer to form a RIEable mask. An ion etching can then be performed to transfer the image of the RIAable mask onto the underlying Ru hard mask and underlying memory element layers.

Abstract: A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Abstract: A method for manufacturing a magnetic memory element array that includes the use of a Ru hard mask layer and a diamond like carbon hard mask layer formed over the Ru hard mask layer. A plurality of magnetic memory element layers are deposited over a wafer and a Ru hard mask layer is deposited over the plurality of memory element layers. A layer of diamond like carbon is deposited over the Ru hard mask layer, and a photoresist mask is formed over the layer of diamond like carbon. A reactive ion etching is then performed to transfer the image of the photoresist mask onto the diamond like carbon mask, and an ion milling is performed to transfer the image of the patterned diamond like carbon mask onto the underlying Ru hard mask and memory element layers. The diamond like carbon mask can then be removed by reactive ion etching.

Abstract: A magnetic memory element having a Ru hard mask layer. The use of Ru advantageously allows for closer spacing of adjacent magnetic memory elements leading to increased data density. In addition, the use of Ru as a hard mask reduces parasitic electrical resistance by virtue of the fact that Ru does not oxidize in ordinary manufacturing environments. The magnetic memory element can be formed by depositing a plurality of memory element layers, depositing a Ru hard mask layer, depositing a RIEable layer over the Ru hard mask layer, and forming a photoresist mask over the hard mask layer. A reactive ion etching can be performed to transfer the image of the photoresist mask onto the RIEable layer to form a RIEable mask. An ion etching can then be performed to transfer the image of the RIAable mask onto the underlying Ru hard mask and underlying memory element layers.

Abstract: A method for manufacturing a magnetic memory element array that includes the use of a Ru hard mask layer and a diamond like carbon hard mask layer formed over the Ru hard mask layer. A plurality of magnetic memory element layers are deposited over a wafer and a Ru hard mask layer is deposited over the plurality of memory element layers. A layer of diamond like carbon is deposited over the Ru hard mask layer, and a photoresist mask is formed over the layer of diamond like carbon. A reactive ion etching is then performed to transfer the image of the photoresist mask onto the diamond like carbon mask, and an ion milling is performed to transfer the image of the patterned diamond like carbon mask onto the underlying Ru hard mask and memory element layers. The diamond like carbon mask can then be removed by reactive ion etching.

Abstract: Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.

Abstract: A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.

Abstract: A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Abstract: A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.

Abstract: A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure can be a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer can be a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.

Abstract: Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.

Abstract: Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.

Abstract: Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.

Abstract: A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.