Patents by Inventor Jacob C. RUZICKA

Jacob C. RUZICKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12051573
    Abstract: A method of forming a particle trap on a sputtering chamber component comprises forming a first pattern on at least a portion of a surface of the sputtering chamber component to form a first patterned top surface, and forming a second pattern on at least a portion of the first patterned top surface.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: July 30, 2024
    Assignee: Honeywell International Inc.
    Inventors: James L. Koch, Jacob C. Ruzicka
  • Publication number: 20220044918
    Abstract: A method of forming a particle trap on a sputtering chamber component comprises forming a first pattern on at least a portion of a surface of the sputtering chamber component to form a first patterned top surface, and forming a second pattern on at least a portion of the first patterned top surface.
    Type: Application
    Filed: October 21, 2021
    Publication date: February 10, 2022
    Inventors: James L. Koch, Jacob C. Ruzicka
  • Patent number: 11183373
    Abstract: A sputtering chamber particle trap comprises first and second patterns formed on at least a portion of a surface of the particle trap. The first pattern includes one of: first indentations having a first depth and separated by first and second threads, and first ridges having a first height and separated by first and second grooves. The second pattern is formed on at least a portion of the first pattern and includes one of: second indentations having a second depth and separated by third and fourth threads, and second ridges having a second height and separated by third and fourth grooves. A method of forming a particle trap on a sputtering chamber component is also disclosed.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: November 23, 2021
    Assignee: Honeywell International Inc.
    Inventors: James L. Koch, Jacob C. Ruzicka
  • Publication number: 20190108988
    Abstract: A sputtering chamber particle trap comprises first and second patterns formed on at least a portion of a surface of the particle trap. The first pattern includes one of: first indentations having a first depth and separated by first and second threads, and first ridges having a first height and separated by first and second grooves. The second pattern is formed on at least a portion of the first pattern and includes one of: second indentations having a second depth and separated by third and fourth threads, and second ridges having a second height and separated by third and fourth grooves. A method of forming a particle trap on a sputtering chamber component is also disclosed.
    Type: Application
    Filed: October 2, 2018
    Publication date: April 11, 2019
    Inventors: James L. Koch, Jacob C. Ruzicka
  • Publication number: 20180218890
    Abstract: A high surface area coil for use with a physical vapor deposition apparatus comprising a first surface. At least a portion of the first surface has a macrotexture with a surface roughness between about 15 ?m and about 150 ?m. At least a portion of the first surface has a microtexture with a surface roughness between about 2 ?m and 15 ?m.
    Type: Application
    Filed: July 18, 2016
    Publication date: August 2, 2018
    Inventors: John A. DUNLOP, Kevin T. HUBERT, Jacob C. RUZICKA, Andrew N.A. WRAGG, Michael D. BLONDELL, William P. JARDEE, Phillip F. JOHN, Edward P. LARA, Wayne D. MEYER, Adam P. DAUB, Scott A. BUCKHART, Travis C. JUNTTILA