Abstract: A magnetic random access memory (MRAM) structure includes a source line connected to a source area of a semiconductor substrate, a magnetic tunnel junction (MTJ) connected to a drain area of the semiconductor substrate, and a gate disposed over the semiconductor substrate between the source area and the drain area. The MRAM structure further includes a contact structure that is configured to apply a first voltage bias to the gate and a means for applying a second voltage bias to the semiconductor substrate outside of the source area and the drain area.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a variable magnetization orientation, and a synthetic antiferromagnetic layer structure including at least three ferromagnetic layers arranged one over the other and antiferromagnetically coupled, each ferromagnetic layer having a fixed magnetization orientation, wherein the free magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method for forming a magnetoresistive device is also provided.