Abstract: A memory processing unit architecture can include a plurality of memory regions and a plurality of processing regions interleaved between the plurality of memory regions. The plurality of processing regions can be configured to perform computation functions of a model such as an artificial neural network. Data can be transferred between the computation functions in respective memory processing regions. In addition, the memory regions can be utilized to transfer data between a computation function in one processing region and a computation function in another processing region adjacent to the given memory region.

Abstract: Many signal processing, machine learning and scientific computing applications require a large number of multiply-accumulate (MAC) operations. This type of operation is demanding in both computation and memory. Process in memory has been proposed as a new technique that computes directly on a large array of data in place, to eliminate expensive data movement overhead. To enable parallel multi-bit MAC operations, both width- and level-modulating memory word lines are applied. To improve performance and provide tolerance against process-voltage-temperature variations, a delay-locked loop is used to generate fine unit pulses for driving memory word lines and a dual-ramp Single-slope ADC is used to convert bit line outputs. The concept is prototyped in a 180 nm CMOS test chip made of four 320×64 compute-SRAMs, each supporting 128× parallel 5 b×5 b MACs with 32 5 b output ADCs and consuming 16.6 mW at 200 MHz.

Abstract: Many signal processing, machine learning and scientific computing applications require a large number of multiply-accumulate (MAC) operations. This type of operation is demanding in both computation and memory. Process in memory has been proposed as a new technique that computes directly on a large array of data in place, to eliminate expensive data movement overhead. To enable parallel multi-bit MAC operations, both width- and level-modulating memory word lines are applied. To improve performance and provide tolerance against process-voltage-temperature variations, a delay-locked loop is used to generate fine unit pulses for driving memory word lines and a dual-ramp Single-slope ADC is used to convert bit line outputs. The concept is prototyped in a 180 nm CMOS test chip made of four 320×64 compute-SRAMs, each supporting 128× parallel 5 b×5 b MACs with 32 5 b output ADCs and consuming 16.6 mW at 200 MHz.