Abstract: A rotary tool assembly includes a main body, a motor disposed in the main body, and a power source coupled to the main body. The power source being configured to provide electrical power to the motor. A rotary tool attached to the main body. The rotary tool configured to be actuated by the motor. A first bit storage area disposed on the main body. The first bit storage area being configured to receive a first bit. A second bit storage area disposed on the main body. The second bit storage area being configured to receive a second bit.

Abstract: Methods of forming a polyarylene sulfide and systems as may be utilized in carrying out the methods are described. Included in the formation method is a filtration process for treatment of a mixture, the mixture including a polyarylene sulfide, a salt byproduct of the polyarylene sulfide formation reaction, and a solvent. The filtration process includes maintaining the downstream side of the filter medium at an increased pressure. The downstream pressure can such that the boiling temperature of the mixture at the downstream pressure can be higher than the temperature at which the polyarylene sulfide is insoluble in the solvent.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: A method for formation of a semi-crystalline polyarylene sulfide is described. The method can include reaction of sulfur-containing monomer with a dihaloaromatic monomer in an organic amide solvent to form a polymer following by combination of the polymer with a crystallization solution. The crystallization solution is pre-heated and the mixture formed is slowly cooled to crystallize the polymer.

Abstract: A method for washing a polyarylene sulfide with a washing solution that contains a carefully controlled solvent content is provided. More particularly, the washing solution typically contains water (e.g., deionized water) in an amount of from about 30 wt. % to about 70 wt. % and an aprotic organic solvent in an amount of from about 30 wt. % to about 70 wt. %. Within such carefully controlled ranges, the present inventors have discovered that the polyarylene sulfide can retain a relatively high oligomer content, which in turn, helps minimize the melt viscosity.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: A multi-stage process and system for formation of a polyarylene sulfide is described. The multi-stage process can include at least three separate formation stages that can take place in three different reactors. The first stage of the formation process can include reaction of an alkali metal sulfide with an organic amide solvent to form a complex including a hydrolysis product of the solvent and an alkali metal hydrogen sulfide. The second stage of the formation process can include reaction of the complex formed in the first stage with a dihaloaromatic monomer to form a prepolymer, and the third stage can include further polymerization of the prepolymer with additional monomers to form the final product.

Abstract: Methods of forming a polyarylene sulfide and systems as may be utilized in carrying out the methods are described. Included in the formation method is a filtration process for treatment of a mixture, the mixture including a polyarylene sulfide, a salt byproduct of the polyarylene sulfide formation reaction, and a solvent. The filtration process includes maintaining the downstream side of the filter medium at an increased pressure. The downstream pressure can such that the boiling temperature of the mixture at the downstream pressure can be higher than the temperature at which the polyarylene sulfide is insoluble in the solvent.

Abstract: A method for formation of a semi-crystalline polyarylene sulfide is described. The method can include reaction of sulfur-containing monomer with a dihaloaromatic monomer in an organic amide solvent to form a polymer following by combination of the polymer with a crystallization solution. The crystallization solution is pre-heated and the mixture formed is slowly cooled to crystallize the polymer.

Abstract: A method for washing a polyarylene sulfide with a washing solution that contains a carefully controlled solvent content is provided. More particularly, the washing solution typically contains water (e.g., deionized water) in an amount of from about 30 wt. % to about 70 wt. % and an aprotic organic solvent in an amount of from about 30 wt. % to about 70 wt. %. Within such carefully controlled ranges, the present inventors have discovered that the polyarylene sulfide can retain a relatively high oligomer content, which in turn, helps minimize the melt viscosity.

Abstract: Methods of forming a polyarylene sulfide and systems as may be utilized in carrying out the methods are described. Included in the formation method is a filtration process for treatment of a mixture, the mixture including a polyarylene sulfide, a salt byproduct of the polyarylene sulfide formation reaction, and a solvent. The filtration process includes maintaining the downstream side of the filter medium at an increased pressure. The downstream pressure can such that the boiling temperature of the mixture at the downstream pressure can be higher than the temperature at which the polyarylene sulfide is insoluble in the solvent.

Abstract: A method for formation of a semi-crystalline polyarylene sulfide is described. The method can include reaction of sulfur-containing monomer with a dihaloaromatic monomer in an organic amide solvent to form a polymer following by combination of the polymer with a crystallization solution. The crystallization solution is pre-heated and the mixture formed is slowly cooled to crystallize the polymer.

Abstract: A multi-stage process and system for formation of a polyarylene sulfide is described. The multi-stage process can include at least three separate formation stages that can take place in three different reactors. The first stage of the formation process can include reaction of an alkali metal sulfide with an organic amide solvent to form a complex including a hydrolysis product of the solvent and an alkali metal hydrogen sulfide. The second stage of the formation process can include reaction of the complex formed in the first stage with a dihaloaromatic monomer to form a prepolymer, and the third stage can include further polymerization of the prepolymer with additional monomers to form the final product.

Abstract: A method for formation of a semi-crystalline polyarylene sulfide is described. The method can include reaction of sulfur-containing monomer with a dihaloaromatic monomer in an organic amide solvent to form a polymer following by combination of the polymer with a crystallization solution. The crystallization solution is pre-heated and the mixture formed is slowly cooled to crystallize the polymer.

Abstract: Methods of forming a polyarylene sulfide and systems as may be utilized in carrying out the methods are described. Included in the formation method is a filtration process for treatment of a mixture, the mixture including a polyarylene sulfide, a salt byproduct of the polyarylene sulfide formation reaction, and a solvent. The filtration process includes maintaining the downstream side of the filter medium at an increased pressure. The downstream pressure can such that the boiling temperature of the mixture at the downstream pressure can be higher than the temperature at which the polyarylene sulfide is insoluble in the solvent.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.