Abstract: The techniques described herein relate to methods, apparatus, and computer readable media configured to determine a current data transmission sequence number for a next packet in a communication session with a remote computing device. An interruption in the communication session is detected. Checkpointed data for the communication session is determined that is indicative of a previous sequence number used for a previous packet sent to the remote computing device. A resolution procedure is performed to determine the current data transmission sequence number for the next packet in the communication session, including determining an estimated next sequence number for transmitting data in the communication session based on the checkpointed data, transmitting a first packet to the remote computing device, receiving a second packet from the remote computing device that has an associated sequence number, and determining the current sequence number for the next packet in the communication session.

Abstract: Provided herein are compounds useful for binding to one or more histone deacetylase enzymes (HDACs). The present application further provides radiolabeled compounds useful as a radiotracer for position emission tomography imaging of HDAC. Methods for prepared unlabeled and labeled compounds, diagnostic methods, and methods of treating diseases associated HDAC are also provided.

Abstract: Provided herein are radiolabeled compounds useful for minimally invasive imaging techniques. An exemplary radiolabeled compound provided herein is useful as a radiotracer for position emission tomography imaging of voltage gated sodium channels. Methods for prepared unlabeled and labeled compounds, and diagnostic methods using the compounds are also provided.

Abstract: The present disclosure describes compounds of the formula: (I), (II), (III), (IV), (V). The compounds described herein may be cyclooxygenase (COX) (e.g., cyclooxygenase 2 (COX2)) inhibitors. The compounds may be radiolabeled. The compounds (e.g., radiolabeled compounds) may be useful (e.g., as positron emission tomography (PET) imaging agents) for diagnosing a disease. The compounds may also be useful for treating or preventing a disease. The present disclosure also describes pharmaceutical compositions and kits including the compounds; and methods of using the compounds.

Abstract: Provided herein are radiolabeled compounds useful for minimally invasive imaging techniques. An exemplary radiolabeled compound provided herein is useful as a radiotracer for position emission tomography imaging of voltage gated sodium channels. Methods for prepared unlabeled and labeled compounds, and diagnostic methods using the compounds are also provided.

Abstract: Provided herein are compounds useful for binding to one or more histone deacetylase enzymes (HDACs). The present application further provides radiolabeled compounds useful as a radiotracer for position emission tomography imaging of HDAC. Methods for prepared unlabeled and labeled compounds, diagnostic methods, and methods of treating diseases associated HDAC are also provided.

Abstract: Provided herein are compounds useful for binding to one or more histone deacetylase enzymes (HDACs). The present application further provides radiolabeled compounds useful as a radiotracer for position emission tomography imaging of HDAC. Methods for prepared unlabeled and labeled compounds, diagnostic methods, and methods of treating diseases associated HDAC are also provided.

Abstract: Provided herein are radiolabeled compounds useful for minimally invasive imaging techniques. An exemplary radiolabeled compound provided herein is useful as a radiotracer for position emission tomography imaging of voltage gated sodium channels. Methods for prepared unlabeled and labeled compounds, and diagnostic methods using the compounds are also provided.

Abstract: Provided herein are compounds useful for binding to one or more histone deacetylase enzymes (HDACs). The present application further provides radiolabeled compounds useful as a radiotracer for position emission tomography imaging of HDAC. Methods for prepared unlabeled and labeled compounds, diagnostic methods, and methods of treating diseases associated HDAC are also provided.

Abstract: Provided herein are radiolabeled compounds useful for minimally invasive imaging techniques. An exemplary radiolabeled compound provided herein is useful as a radiotracer for position emission tomography imaging of voltage gated sodium channels. Methods for prepared unlabeled and labeled compounds, and diagnostic methods using the compounds are also provided.

Abstract: Disclosed herein are compounds and methods for detecting enzyme activity. In some embodiments, the enzyme is a deacetylase enzyme such as HDAC. The compound of the invention comprises a detectable label, a linker, and an enamide group. The compound can be enzymatically cleaved by the enzyme of interest to produce a nucleophilic fragment that includes the detectable label. Measurement of a signal generated by the detectable label can indicate enzyme activity. The compounds can be used as either in vivo or in vitro enzyme probes.

Abstract: A method for providing 11C-labeled cyanides from 11C labeled oxides in a target gas stream retrieved from an irradiated high pressure gaseous target containing O2 is provided, wherein 11C labeled oxides are reduced with H2 in the presence of a nickel catalyst under a pressure and a temperature sufficient to form a product stream comprising at least about 95% 11CH4 , the 11CH4 is then combined with an excess of NH3 in a carrier/reaction stream flowing at an accelerated velocity and the combined 11CH4 carrier/reaction stream is then contacted with a platinum (Pt) catalyst particulate supported on a substantially-chemically-nonreactive heat-stable support at a temperature of at least about 900 ° C., whereby a product stream comprising at least about 60%H11CN is provided in less than 10 minutes from retrieval of the 11C labeled oxide.

Abstract: A method for providing 11C-labeled cyanides from 11C labeled oxides in a target gas stream retrieved from an irradiated high pressure gaseous target containing O2, wherein 11C labeled oxides are reduced with H2 in the presence of a nickel catalyst under a pressure and a temperature sufficient to form a product stream comprising at least about 95% 11CH4, the 11CH4 is then combined with an excess of NH3 in a carrier/reaction stream flowing at an accelerated velocity and the combined 11CH4 carrier/reaction stream is then contacted with a platinum (Pt) catalyst particulate supported on a substantially-chemically-nonreactive heat-stable support at a temperature of at least about 900° C., whereby a product stream comprising at least about 60% H11CN is provided in less than 10 minutes from retrieval of the 11C labeled oxide.

Abstract: A method is described for forming gate structures with different metals on a single substrate. A thin semiconductor layer (26) is formed over gate dielectric (24) and patterned to be present in a first region (16) not a second region (18). Then, metal (30) is deposited and patterned to be present in the second region not the first. Then, a fully suicided gate process is carried out to result in a fully suicided gate structure in the first region and a gate structure in the second region including the fully suicided gate structure above the deposited metal (30).

Abstract: The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide.

Abstract: A semiconductor device, fabricated by a method, having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate is disclosed. In one embodiment, the method includes i) forming, at least at the silicon region, a metal cluster layer from a first metal, such that, in the metal cluster layer, metal clusters alternate with sites where there are no metal clusters, the first metal being a non-siliciding metal at predetermined conditions, ii) depositing a metal layer of a second metal on top of the metal cluster layer, the second metal being a siliciding metal and iii) carrying out at least one heat treatment at the predetermined conditions on the second metal layer so as to form metal silicide through reaction of the second metal with the silicon region, wherein atoms of the first metal are displaced in a direction substantially perpendicular to the surface of the substrate.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a field effect transistor, in which method a semiconductor body (1) of a semiconductor material is provided, at a surface thereof, with a source region (2) and a drain region (3) and with a gate region (4) between the source region (2) and the drain region (3), which gate region comprises a semiconductor region (4A) of a further semiconductor material that is separated from the surface of the semiconductor body (1) by a gate dielectric (5), and with spacers (6) adjacent to the gate region (4), for forming the source and drain regions (2,3), in which method the source region (2) and the drain region (3) are provided with a metal layer (7) which is used to form a compound (8) of the metal and the semiconductor material, and the gate region (4) is provided with a metal layer (7) which is used to form a compound (8) of the metal and the further semiconductor material.

Abstract: Method of manufacturing a semiconductor device comprising MOS transistors having gate electrodes (15, 16) formed in a number of metal layers (8, 9, 13; 8, 12, 13) deposited upon one another. In this method, active silicon regions (4, 5) provided with a layer of a gate dielectric (7) and field-isolation regions (6) insulating these regions with respect to each other are formed in a silicon body (1). Then, a layer off a first metal (8) is deposited in which locally, at the location of a part of the active regions (4), nitrogen is introduced. On the layer of the first metal, a layer of a second metal (13) is then deposited, after which the gate electrodes are etched in the metal layers. Before nitrogen is introduced into the first metal layer, an auxiliary layer of a third metal (9) which is permeable to nitrogen is deposited on the first metal layer. Thus, the first metal layer can be nitrided locally without the risk of damaging the underlying gate dielectric.

Abstract: The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide.

Abstract: One embodiment of the invention relates to a method for fabricating a semiconductor device having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate. The method comprises forming a metal cluster layer from a first, non-siliciding metal, followed by the deposition of a metal layer consisting of a second, siliciding metal. A subsequent heat treatment is responsible for forming a metal silicide from the second metal, the atoms of the first metal being displaced in a direction substantially perpendicular to the surface of the substrate. According to one embodiment of the invention, the atoms of the first metal are displaced by the Kirkendall effect to beneath the metal silicide. If an MOST, for example, is being fabricated, this has advantages both at the location of the source and drain region and at the location of the gate electrode.