Abstract: Example methods, systems, and articles of manufacture may relate to an aerial vehicle. The methods, systems, and articles of manufacture may include receiving an audio signal with a microphone of the aerial vehicle. The methods, systems, and articles of manufacture may also include processing the audio signal to determine at least one of a distance and type of aircraft located near the aerial vehicle. Additionally, the methods, systems, and articles of manufacture may include, based on the determination, performing at least one maneuver of the aerial vehicle.

Abstract: An aerial vehicle includes an airframe; vertical propulsion units, and a controller. The vertical propulsion units are mounted to the airframe and include propellers oriented to provide vertical propulsion to the aerial vehicle. The vertical propulsion units are physically organized in quadrants on the airframe with each of the quadrants including two or more of the vertical propulsion units. The controller is coupled to the vertical propulsion units to control operation of the vertical propulsion units. At least two of the vertical propulsion units in each of the quadrants are adapted to counter-rotate from each other during flight of the aerial vehicle.

Abstract: A technique of controlling tonal noises produced by an unmanned aerial vehicle (UAV) includes generating thrust with a plurality of rotor units mounted to the UAV to propel the UAV into flight. Each of the rotor units includes a bladed rotor. A rotation rate or a phase delay of at least one of the rotor units is adjusted relative to another of the rotor units. The adjustment causes a spread in the tonal noises generated by the rotor units.

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.

Abstract: A propulsion unit includes a motor rotor that spins about a central rotational axis, propeller blades each having a proximal base and a distal tip, and pivot mounts each coupling the proximal base of a corresponding one of the propeller blades to the motor rotor. The propeller blades each freely pivot at the proximal base about a corresponding offset pivoting axis that is substantially parallel to but offset from the central rotational axis of the motor rotor.

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

Abstract: An aerial vehicle includes an airframe; vertical propulsion units, and a controller. The vertical propulsion units are mounted to the airframe and include propellers oriented to provide vertical propulsion to the aerial vehicle. The vertical propulsion units are physically organized in quadrants on the airframe with each of the quadrants including two or more of the vertical propulsion units. The controller is coupled to the vertical propulsion units to control operation of the vertical propulsion units. At least two of the vertical propulsion units in each of the quadrants are adapted to counter-rotate from each other during flight of the aerial vehicle.

Abstract: A propulsion unit includes a motor rotor that spins about a central rotational axis, propeller blades each having a proximal base and a distal tip, and pivot mounts each coupling the proximal base of a corresponding one of the propeller blades to the motor rotor. The propeller blades each freely pivot at the proximal base about a corresponding offset pivoting axis that is substantially parallel to but offset from the central rotational axis of the motor rotor.

Abstract: A technique of controlling tonal noises produced by an unmanned aerial vehicle (UAV) includes generating thrust with a plurality of rotor units mounted to the UAV to propel the UAV into flight. Each of the rotor units includes a bladed rotor. A rotation rate or a phase delay of at least one of the rotor units is adjusted relative to another of the rotor units. The adjustment causes a spread in the tonal noises generated by the rotor units.

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.

Abstract: Metal seed layers for solar cell conductive contacts and methods of forming metal seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. A semiconductor region is disposed in or above the substrate. A conductive contact is disposed on the semiconductor region and includes a seed layer in contact with the semiconductor region. The seed layer is composed of aluminum (Al) and a second, different, metal.