Abstract: The present disclosure relates diffusion barrier layers for backend layers for interconnects and their methods of manufacturing. A TaNx/Ta diffusion barrier layer used for backend interconnect is formed at a temperature between about 150-450° C. wherein the Ta film exhibits a body-centered-cubic (BCC) structure and a lower electrical resistivity. Other embodiments are described and claimed.

Abstract: Embodiments of the present disclosure are directed towards interlayer interconnects and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, one or more device layers disposed on the semiconductor substrate, and one or more interconnect layers disposed on the one or more device layers, the one or more interconnect layers including interconnect structures configured to route electrical signals to or from the one or more device layers, the interconnect structures comprising copper (Cu) and germanium (Ge). Other embodiments may be described and/or claimed.

Abstract: Formation of an interconnect circuit feature having a metal and an electropositive dopant. The interconnect feature may contain an accumulation of the electropositive dopant at interface boundaries of the interconnect feature to reduce electromigration of the metal during operation. In a method the interconnect feature may be heated to drive a portion of the electropositive dopant to the interfaces.

Abstract: Formation of an interconnect circuit feature having a metal and an electropositive dopant. The interconnect feature may contain an accumulation of the the electropositive dopant at interface boundaries of the interconnect feature to reduce electromigration of the metal during operation. In a method the interconnect feature may be heated to drive a portion of the electropositive dopant to the interfaces.

Abstract: Formation of an interconnect circuit feature having a metal and an electropositive dopant. The interconnect feature may comprise an accumulation of the electropositive dopant at interface boundaries of the interconnect feature to reduce electromigration of the metal during operation. A method may comprise heating the interconnect feature to drive a portion of the electropositive dopant to the interfaces.

Abstract: Formation of an interconnect circuit feature having a metal and an electropositive dopant. The interconnect feature may comprise an accumulation of the electropositive dopant at interface boundaries of the interconnect feature to reduce electromigration of the metal during operation. A method may comprise heating the interconnect feature to drive a portion of the electropositive dopant to the interfaces.