Abstract: A termination assembly for a heater assembly includes a plurality of resistive heaters arranged in discrete power phases, each resistive heater comprising a resistive heating element surrounded by dielectric material and a sheath. The termination assembly includes a plurality of electrically nonconductive members. Each electrically nonconductive member includes a plurality of apertures configured to receive power pins of the plurality of resistive heaters. The termination assembly includes a plurality of connectors configured to connect the power pins to the electrically nonconductive members. Each electrically nonconductive member includes a number of the plurality of connectors corresponding to a number of power pins being terminated. The termination assembly includes an electrical circuit embedded in or disposed on at least one of the plurality of electrically nonconductive members.

Abstract: A thermal system includes a base member, a two-phase fluid, a tuning heater, and a chuck. The base member includes at least one fluid passageway. The two-phase fluid is disposed within the fluid passageway. A pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning heater is secured to the base member. The chuck is secured to the tuning heater opposite to the base member. The tuning heater includes a plurality of zones to fine tune a heat distribution provided by the base member to the chuck.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

Abstract: A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer.

Abstract: A thermal system includes: a base member including at least one fluid passageway in which a two-phase fluid is disposed; a tuning layer secured to the base member; and a control system. The pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning layer includes a plurality of zones. The control system includes a plurality of sets of power lines in communication with the tuning layer, and a plurality of addressable control elements in electrical communication with the power lines and with the tuning layer. The control elements provide selective control of the tuning layer zones.

Abstract: A thermal system includes a base member, a two-phase fluid, a tuning heater, and a chuck. The base member includes at least one fluid passageway. The two-phase fluid is disposed within the fluid passageway. A pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning heater is secured to the base member. The chuck is secured to the tuning heater opposite to the base member. The tuning heater includes a plurality of zones to fine tune a heat distribution provided by the base member to the chuck.

Abstract: A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly on the application substrate, an insulation layer disposed on the heater layer, and a second substrate disposed on the insulation layer. The heater layer is directly disposed on the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer. A periphery of the second substrate extends beyond a periphery of the application substrate.

Abstract: A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly onto the application substrate, an insulation layer disposed onto the heater layer, and a second substrate disposed onto the insulation layer. The heater layer is directly disposed onto the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer.

Abstract: A thermal system includes: a base member including at least one fluid passageway in which a two-phase fluid is disposed; a tuning layer secured to the base member; and a control system. The pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning layer includes a plurality of zones. The control system includes a plurality of sets of power lines in communication with the tuning layer, and a plurality of addressable control elements in electrical communication with the power lines and with the tuning layer. The control elements provide selective control of the tuning layer zones.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.

Abstract: A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.

Abstract: A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly onto the application substrate, an insulation layer disposed onto the heater layer, and a second substrate disposed onto the insulation layer. The heater layer is directly disposed onto the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer.

Abstract: A heater system is provided that includes a hybrid insulation cover that has a first cover disposed around hinged carrier members and heat trace sections, and a second cover operatively engaged with the first cover and adapted for detachable placement around a heating target and its varying geometries. A flexible insulation jacket having a similar construction as the second cover is also provided for use with connector assemblies. Furthermore, a heater system is provided that includes at least one heat trace section encapsulated within adjacent insulating members for use with heating gaslines and pumplines of semiconductor processing systems.