Patents by Inventor Jacob Woodruff

Jacob Woodruff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250109501
    Abstract: The disclosed and claimed subject matter relates to thermal atomic layer etch (ALE) processing of metals and alloys thereof (e.g., cobalt and cobalt alloys) using thionyl chloride (SOCl2) or a combination of thionyl chloride and pyridine.
    Type: Application
    Filed: February 1, 2023
    Publication date: April 3, 2025
    Inventors: Ravindra KANJOLIA, Jacob WOODRUFF, Mansour MOINPOUR, Charles DEZELAH, Holger SAARE, Wenyi XIE, Gregory PARSONS, Martin MCBRIARTY
  • Patent number: 12163223
    Abstract: A process is described for production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular, in memory elements of the ReRAM type. Additionally, compounds for production of the molecular layer are disclosed, as well as memory elements containing the molecular layer.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: December 10, 2024
    Assignee: MERCK PATENT GMBH
    Inventors: Peer Kirsch, Sebastian Resch, Henning Seim, Jacob Woodruff, Charith Nanayakkara
  • Patent number: 12035546
    Abstract: The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I R1-(A1-Z1)r—(B1)n—(Z2-A2)s-Sp-G??(I) in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: July 9, 2024
    Assignee: MERCK PATENT GMBH
    Inventors: Peer Kirsch, Sebastian Resch, Henning Seim, Marc Tornow, Takuya Kamiyama, Gerd-Volker Roeschenthaler, Romana Pajkert, Jacob Woodruff, Charith Nanayakkara
  • Patent number: 11976352
    Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO)3, wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-C6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-C6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N2, or a reducing gas such as H2 or a combination thereof.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: May 7, 2024
    Assignee: MERCK PATENT GMBH
    Inventors: Jacob Woodruff, Guo Liu, Ravindra Kanjolia
  • Publication number: 20230416911
    Abstract: A thermal atomic layer deposition method for selectively deposition of silicon and oxygen containing dielectric film selected from silicon oxide or carbon doped silicon oxide abundantly on a dielectric surface but not less on a metal surface employing a silicon precursor having at least three isocyanato ligands.
    Type: Application
    Filed: November 15, 2021
    Publication date: December 28, 2023
    Inventors: RAVINDRA KANJOLIA, GUO LIU, MARK POTYEN, JACOB WOODRUFF, BHUSHAN ZOPE, XINJIAN LEI
  • Patent number: 11848200
    Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: December 19, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Jacob Woodruff, Bed Sharma
  • Publication number: 20230402290
    Abstract: The disclosed and claimed subject matter relates to thermal ALE processing of metal oxide films using one or more fluorinating agent and one or more chlorinating agent.
    Type: Application
    Filed: March 21, 2023
    Publication date: December 14, 2023
    Inventors: Ravindra KANJOLIA, Jacob WOODRUFF, Mansour MOINPOUR, Charles DEZELAH, Wenyi XIE, Holger SAARE, Gregory PARSONS
  • Publication number: 20230227966
    Abstract: Methods of forming ruthenium-containing films by pulsed chemical vapor deposition are provided. The methods include at least one deposition cycle. The deposition cycle includes pulsing a zerovalent Ru precursor with a carrier gas in the absence of a co-reactant onto a surface of a substrate, and delivering a purge gas to the surface of the substrate.
    Type: Application
    Filed: June 28, 2021
    Publication date: July 20, 2023
    Inventors: Guo LIU, Jacob WOODRUFF, Ravindra KANJOLIA
  • Publication number: 20230203645
    Abstract: Methods of forming molybdenum-containing films are provided. The methods include thermally depositing a first film on a surface of a substrate, for example, at a first temperature less than or equal to about 400° C., and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film, for example, at a second temperature of greater than about 400° C. The first film can include an elemental metal, for example, tungsten, molybdenum, ruthenium, or cobalt. The second film includes a reaction product of a molybdenum-containing precursor and a reducing agent.
    Type: Application
    Filed: May 21, 2021
    Publication date: June 29, 2023
    Inventors: Guo LIU, Jacob WOODRUFF, Jean-Sébastien LEHN
  • Publication number: 20230108732
    Abstract: Methods of forming metal-containing films are provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.
    Type: Application
    Filed: February 1, 2021
    Publication date: April 6, 2023
    Inventors: Joby ELDO, Jacob WOODRUFF, Shawn Sungeun HONG, Ravindra KANJOLIA, Charith NANAYAKKARA, Charles DEZELAH
  • Publication number: 20230089523
    Abstract: The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.
    Type: Application
    Filed: June 15, 2021
    Publication date: March 23, 2023
    Inventors: Vijay Kris NARASIMHAN, Jean-Sébastien LEHN, Karl LITTAU, Jacob WOODRUFF, Ravindra KANJOLIA
  • Publication number: 20230049464
    Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium-containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.
    Type: Application
    Filed: January 14, 2021
    Publication date: February 16, 2023
    Inventors: Guo LIU, Jacob WOODRUFF
  • Publication number: 20230002898
    Abstract: The invention relates to a process for the production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular in memory elements of the ReRAM type. The present invention furthermore relates to compounds for the production of the molecular layer and to memory elements comprising the molecular layer.
    Type: Application
    Filed: October 28, 2020
    Publication date: January 5, 2023
    Applicant: Merck Patent GmbH
    Inventors: Peer KIRSCH, Sebastian RESCH, Henning SEIM, Jacob WOODRUFF, Charith NANAYAKKARA
  • Publication number: 20220411930
    Abstract: Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.
    Type: Application
    Filed: November 3, 2020
    Publication date: December 29, 2022
    Inventors: Charith NANAYAKKARA, Joby ELDO, Jacob WOODRUFF, Charles DEZELAH, Shawn Sungeun HONG, Ravindra KANJOLIA, Daniel MOSER, Mark C. POTYEN
  • Publication number: 20220341039
    Abstract: The disclosed and claimed subject matter relates to the ruthenium pyrazolate precursors and derivatives thereof as well as their uses in ALD or ALD-like processes and the films grown is such processes. In particular substituted unsaturated pyrazolate bridged diruthenium carbonyl complexes are disclosed.
    Type: Application
    Filed: November 24, 2020
    Publication date: October 27, 2022
    Inventors: Guo LIU, Jean-Sébastien M. LEHN, Charles DEZELAH, Jacob WOODRUFF, Jason P. COYLE
  • Patent number: 11230764
    Abstract: Methods of forming metal-containing films by atomic layer deposition are provided. The methods include delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under sufficient conditions such that the metal-containing film selectively grows on at least a portion of the first substrate.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: January 25, 2022
    Assignee: MERCK PATENT GMBH
    Inventors: Jean-Sébastien Lehn, Charles Dezelah, Jacob Woodruff
  • Publication number: 20210398848
    Abstract: The present inventive concept relates to selective metal layer deposition. Embodiments include a method for atomic layer deposition (ALD) of a metal, the method comprising at least one cycle of: a) exposing a substrate, the substrate comprising a surface comprising a metal portion and an insulator portion, to a metal-organic precursor; b) depositing a metal-organic precursor on an upper surface of the metal portion of the substrate to selectively provide a metal precursor layer on the upper surface of the metal portion of the substrate; c) exposing the metal precursor layer to a co-reactant; and d) depositing the co-reactant on the metal precursor layer, wherein the co-reactant takes part in a ligand exchange with the metal precursor layer.
    Type: Application
    Filed: December 3, 2019
    Publication date: December 23, 2021
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Ravindra KANJOLIA, Mansour MOINPOUR, Jacob WOODRUFF, Steven WOLF, Michael BREEDEN, Scott T. UEDA, Andrew KUMMEL, Ashay ANURAG
  • Publication number: 20210047725
    Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO)3, wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-C6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-C6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N2, or a reducing gas such as H2 or a combination thereof.
    Type: Application
    Filed: February 7, 2019
    Publication date: February 18, 2021
    Inventors: Jacob WOODRUFF, Guo LIU, Ravindra KANJOLIA
  • Publication number: 20200294789
    Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.
    Type: Application
    Filed: May 27, 2020
    Publication date: September 17, 2020
    Inventors: Jacob Woodruff, Bed Sharma
  • Publication number: 20200283894
    Abstract: Methods of forming metal-containing films by atomic layer deposition are provided. The methods include delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under sufficient conditions such that the metal-containing film selectively grows on at least a portion of the first substrate.
    Type: Application
    Filed: June 22, 2018
    Publication date: September 10, 2020
    Applicant: MERCK PATENT GMBH
    Inventors: Jean-Sébastien LEHN, Charles DEZELAH, Jacob WOODRUFF