Patents by Inventor Jacqueline S. Wrench
Jacqueline S. Wrench has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11908914Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor; pre-cleaning the substrate; depositing a titanium silicide (TiSi) layer on the n transistor and on the p transistor by plasma-enhanced chemical vapor deposition (PECVD); optionally depositing a first barrier layer on the titanium silicide (TiSi) layer and selectively removing the first barrier layer from the p transistor; selectively forming a molybdenum silicide (MoSi) layer on the titanium silicide (TiSi) layer on the n transistor and the p transistor; forming a second barrier layer on the molybdenum silicide (MoSi) layer; and annealing the semiconductor structure. The method may be performed in a processing chamber without breaking vacuum.Type: GrantFiled: July 15, 2021Date of Patent: February 20, 2024Assignee: Applied Materials, Inc.Inventors: Ria Someshwar, Seshadri Ganguli, Lan Yu, Siddarth Krishnan, Srinivas Gandikota, Jacqueline S. Wrench, Yixiong Yang
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Patent number: 11894233Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: GrantFiled: September 29, 2022Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Patent number: 11888045Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: GrantFiled: December 21, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C. H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Patent number: 11869806Abstract: Methods for forming a semiconductor structure are described. The method includes cleaning a substrate to form a substrate surface substantially free of oxide, exposing the substrate surface to a first molybdenum precursor, and exposing the substrate surface to a reactant to selectively deposit a first molybdenum film on the substrate surface. The method may be performed in a processing chamber without breaking vacuum. The method may also include forming one or more of a cap layer and a liner and annealing the substrate. The method may also include depositing a second molybdenum film on the substrate surface.Type: GrantFiled: May 7, 2021Date of Patent: January 9, 2024Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Jacqueline S. Wrench, Yixiong Yang, Yong Yang, Srinivas Gandikota
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Patent number: 11776980Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.Type: GrantFiled: March 13, 2020Date of Patent: October 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Luping Li, Jacqueline S. Wrench, Wen Ting Chen, Yixiong Yang, In Seok Hwang, Shih Chung Chen, Srinivas Gandikota
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Publication number: 20230141748Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: ApplicationFiled: January 3, 2023Publication date: May 11, 2023Applicant: Applied Materials, Inc.Inventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Publication number: 20230097400Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.Type: ApplicationFiled: December 7, 2022Publication date: March 30, 2023Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Steven C.H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang, Yong Yang
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Patent number: 11587936Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: GrantFiled: June 1, 2021Date of Patent: February 21, 2023Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Publication number: 20230025937Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: ApplicationFiled: September 29, 2022Publication date: January 26, 2023Applicant: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Publication number: 20230015781Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor; pre-cleaning the substrate; depositing a titanium silicide (TiSi) layer on the n transistor and on the p transistor by plasma-enhanced chemical vapor deposition (PECVD); optionally depositing a first barrier layer on the titanium silicide (TiSi) layer and selectively removing the first barrier layer from the p transistor; selectively forming a molybdenum silicide (MoSi) layer on the titanium silicide (TiSi) layer on the n transistor and the p transistor; forming a second barrier layer on the molybdenum silicide (MoSi) layer; and annealing the semiconductor structure. The method may be performed in a processing chamber without breaking vacuum.Type: ApplicationFiled: July 15, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Ria Someshwar, Seshadri Ganguli, Lan Yu, Siddarth Krishnan, Srinivas Gandikota, Jacqueline S. Wrench, Yixiong Yang
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Patent number: 11552177Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.Type: GrantFiled: September 4, 2020Date of Patent: January 10, 2023Assignee: Applied Materials, Inc.Inventors: Srinivas Gandikota, Steven C. H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang, Yong Yang
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Publication number: 20230005945Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Applicant: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen
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Publication number: 20220403505Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.Type: ApplicationFiled: June 16, 2021Publication date: December 22, 2022Inventors: Annamalai LAKSHMANAN, Jacqueline S. WRENCH, Feihu WANG, Yixiong YANG, Joung Joo LEE, Srinivas GANDIKOTA, Sang-heum KIM, Zhebo CHEN, Gang SHEN
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Publication number: 20220384469Abstract: A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.Type: ApplicationFiled: May 25, 2021Publication date: December 1, 2022Applicant: Applied Materials, Inc.Inventors: Yong Yang, Jacqueline S. Wrench, Yixiong Yang, Pradeep K. Subrahmanyan, Srinivas Gandikota
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Publication number: 20220359532Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.Type: ApplicationFiled: May 5, 2021Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Yong Yang, Kunal Bhatnagar, Srinivas Gandikota, Seshadri Ganguli, Jose Alexandro Romero, Mandyam Sriram, Mohith Verghese, Jacqueline S. Wrench, Yixiong Yang
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Publication number: 20220359281Abstract: Methods for forming a semiconductor structure are described. The method includes cleaning a substrate to form a substrate surface substantially free of oxide, exposing the substrate surface to a first molybdenum precursor, and exposing the substrate surface to a reactant to selectively deposit a first molybdenum film on the substrate surface. The method may be performed in a processing chamber without breaking vacuum. The method may also include forming one or more of a cap layer and a liner and annealing the substrate. The method may also include depositing a second molybdenum film on the substrate surface.Type: ApplicationFiled: May 7, 2021Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Seshadri Ganguli, Jacqueline S. Wrench, Yixiong Yang, Yong Yang, Srinivas Gandikota
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Patent number: 11488830Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: GrantFiled: August 23, 2019Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Patent number: 11476267Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: GrantFiled: May 18, 2020Date of Patent: October 18, 2022Assignee: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen
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Publication number: 20220278108Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: ApplicationFiled: June 1, 2021Publication date: September 1, 2022Applicant: Applied Materials, IncInventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Publication number: 20220277961Abstract: Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: ApplicationFiled: June 1, 2021Publication date: September 1, 2022Applicant: Applied Materials, Inc.Inventors: Annamalai Lakshmanan, Jacqueline S. Wrench, Feihu Wang, Yixiong Yang, Joung Joo Lee, Srinivas Gandikota