Patents by Inventor Jacqueline S. Wrench

Jacqueline S. Wrench has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200411373
    Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.
    Type: Application
    Filed: June 28, 2020
    Publication date: December 31, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yixiong Yang, Srinivas Gandikota, Steven C.H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
  • Publication number: 20200373318
    Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M. Barnal Ramos, Shih Chung Chen
  • Publication number: 20200373404
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
  • Publication number: 20200243341
    Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 30, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yong Wu, Wei V. Tang, Jianqiu Guo, Wenyi Liu, Yixiong Yang, Jacqueline S. Wrench, Mandyam Sriram, Srinivas Gandikota, Yumin He
  • Publication number: 20200063263
    Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 27, 2020
    Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
  • Patent number: 10559578
    Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: February 11, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jacqueline S. Wrench, Jing Zhou, Fuqun Grace Vasiknanonte, Jiang Lu, Paul F. Ma, Nobuyuki Sasaki, Sree Rangasai V. Kesapragada, Sang Ho Yu, Mei Chang
  • Publication number: 20180350826
    Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.
    Type: Application
    Filed: June 1, 2018
    Publication date: December 6, 2018
    Inventors: Jacqueline S. Wrench, Jing Zhou, Fuqun Grace Vasiknanonte, Jiang Lu, Paul F. Ma, Nobuyuki Sasaki, Sree Rangasai V. Kesapragada, Sang Ho Yu, Mei Chang
  • Publication number: 20180340255
    Abstract: Embodiments of the invention provide methods of depositing a CoOx film at lower processing temperatures and with a higher deposition rate. The methods disclosed herein use cobalt tricarbonyl compounds to form the CoOx film. Both atomic layer deposition and chemical vapor deposition techniques are useful in depositing the CoOx film.
    Type: Application
    Filed: May 25, 2018
    Publication date: November 29, 2018
    Inventors: Jing Zhou, Jacqueline S. Wrench, Jiang Lu, Paul F. Ma, Mei Chang