Abstract: A dry grout composition including a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. Also, an anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use.

Abstract: A dry grout composition including a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. Also, an anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use.

Abstract: A dry grout composition including a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. Also, an anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use.

Abstract: A dry grout composition including a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. Also, an anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use.

Abstract: The invention relates to envelopes intended to convey information or a message printed or glued to the interior. The envelope includes a cut in its rear wall allowing enlargement of a communication area that is intended to receive a message carried by the inner face of a flap and of a front wall. An integral opening system is included for preventing any damage of this area during opening. This allows for direct marketing or transmission of confidential information.

Abstract: A dry grout composition including a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. Also, an anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use.

Abstract: A dry grout composition including a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. Also, an anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use.

Abstract: The present invention relates to a dry grout composition comprising a calcium aluminosulfate based hydraulic cement, a mineral filler, a thixotropic agent, and a superplasticizer agent. An anchoring capsule, containing the dry grout composition, for use in anchoring reinforcing member dowel, or anchor elements in a hole of a substrate, and a method of use is also provided.

Abstract: One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response.

Abstract: A DNA fragment coding for a modified nuclear glucocorticoid receptor, particularly one mutated in the region coding for the ligand binding domain, so that receptor activity is more strongly inducible by a synthetic glucocorticoid ligand than by a natural glucocorticoid ligand, is disclosed. A recombination system inducible in mammals by means of a fusion protein produced between a recombinase and the binding domain of the ligand derived from the modified glucocorticoid receptor of which the activity is more strongly inducible by synthetic glucocorticoids than by natural glucocorticoids, is also disclosed.

Abstract: A MOSFET semiconductor device includes a substrate, a gate electrode, a gate oxide, first and second sets sidewall spacers, and nickel silicide layers. The gate oxide is disposed between the gate electrode and the substrate, and the substrate includes source/drain regions. The gate electrode has first and second opposing sidewalls, and the first set of sidewall spacers are formed from a silicon starved spacer materials, examples of which include SiOX, wherein X>2, SiNX, wherein X>1, or SiOXNY, wherein X+Y>2. The second set of sidewall spacers are formed from silicon nitride and are respectively disposed adjacent the first set of sidewall spacers. The nickel silicide layers are disposed on the source/drain regions and the gate electrode. The first set of sidewall spacers act as a silicon diffusion barrier for preventing silicon from migrating from the gate electrode to the second set of sidewall spacers. A method of manufacturing the semiconductor device is also disclosed.

Abstract: A semiconductor device and method for manufacturing the semiconductor device employing mixed metal silicide technology is disclosed. A semiconductor device is provided having a doped silicon region, such as a source/drain. A first metal layer comprising titanium and a second metal layer comprising nickel are deposited over the semiconductor device. The device is subjected to rapid thermal annealing. The resulting device has a mixed metal silicide layer over the doped silicon region, the mixed metal silicide layer and the doped silicon region having smooth interface between them.

Abstract: A method for manufacturing a semiconductor device employing mixed metal silicide technology is disclosed. The method comprises providing a semiconductor device having a doped silicon region, such as a source/drain, sequentially layering a first metal comprising cobalt, and a second layer comprising nickel over the semiconductor device, and subjecting the device to rapid thermal annealing. The resulting device has a mixed metal silicide layer overtop the doped silicon region, wherein the mixed metal silicide layer and the doped silicon region form a smooth boundary between them.

Abstract: A semiconductor device and method for manufacturing the semiconductor device employing mixed metal silicide technology is disclosed. A semiconductor device is provided having a doped silicon region, such as a source/drain. A first metal layer comprising aluminum and a second metal layer comprising nickel are deposited over the semiconductor device. The device is subjected to rapid thermal annealing. The resulting device has a mixed metal silicide layer over the doped silicon region, the mixed metal silicide layer and the doped silicon region having smooth interface between them.

Abstract: A method of manufacturing a MOSFET semiconductor device comprises providing a gate electrode having first and second opposing sidewalls over a substrate having source/drain regions; providing a gate oxide between the gate electrode and the substrate; forming first and second sidewall spacers respectively disposed adjacent the first and second sidewalls; forming nickel silicide layers disposed on the source/drain regions and the gate electrode, and two etching steps. The nickel silicide layers are formed during a rapid thermal anneal at temperatures from about 380 to 600° C. The first etch is performed with a sulfuric peroxide mix to remove unreacted nickel, and the second etch is performed with an ammonia peroxide mix to remove nickel silicide formed over the first and second sidewall spacers.

Abstract: A wet spray cleaning process for removing thick organic layers including hardened photoresist from the surface of silicon wafers yields low residual particle counts for photoresist thicknesses up to 3 microns, and maintains low residual particle density for oxide-covered wafer regions. The cleaning process uses multiple cycles of SPM/DI/APM/DI, without an intervening drying step therebetween.

Abstract: The inventive method provides a wet cleaning of semiconductor devices on semiconductor wafers after photoresist is stripped. Semiconductor wafers are placed into a centrifuge carriage of a processing chamber. The centrifuge carriage rotates the semiconductor wafers. N-methylpyrrolidine heated to a temperature between 65° C. and 85° C. is sprayed onto the semiconductor wafers. Next N-methylpyrrolidine at room temperature is sprayed onto the semiconductor wafers. Finally, water at room temperature is sprayed onto the semiconductor wafers. The inventive method provides high throughput cleaning without undue corrosion or damage to metal layers.

Abstract: The inventive method provides a wet cleaning of semiconductor devices on semiconductor wafers after photoresist is stripped. Semiconductor wafers are placed into a centrifuge carriage of a processing chamber. The centrifuge carriage rotates the semiconductor wafers. N-methylpyrrolidine heated to a temperature between 65° C. and 85° C. is sprayed onto the semiconductor wafers. Next N-methylpyrrolidine at room temperature is sprayed onto the semiconductor wafers. Finally, water at room temperature is sprayed onto the semiconductor wafers. The inventive method provides high throughput cleaning without undue corrosion or damage to metal layers.

Abstract: The inventive method provides a wet cleaning of semiconductor devices on semiconductor wafers after photoresist is stripped. Semiconductor wafers are placed into a centrifuge carriage of a processing chamber. The centrifuge carriage rotates the semiconductor wafers. N-methylpyrrolidine heated to a temperature between 65° C. and 85° C. is sprayed onto the semiconductor wafers. Next N-methylpyrrolidine at room temperature is sprayed onto the semiconductor wafers. Finally, water at room temperature is sprayed onto the semiconductor wafers. The inventive method provides high throughput cleaning without undue corrosion or damage to metal layers.

Abstract: An integrated circuit and a method of removing photoresist is described. The process described uses a low oxygen gas or non-oxygen gas plasma that removes the photoresist and provides a protective surface layer over the low-k dielectric material. The low-k dielectric material is part of a dielectric stack. After exposure to the gas plasmas the integrated circuit is subjected to solvent.