Abstract: A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.

Abstract: A thermally stable spin valve sensor having an increased GMR ratio by virtue of an AP pinned layer structure in which the first and second pinned layers are separated by an AP coupling layer having a nano-oxide layer formed as an oxidized surface portion of the AP coupling layer. The nano-oxide layer provides an increase in the specular scattering, and in turn, an increase in the GMR ratio.

Abstract: A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer.

Abstract: A thermally stable spin valve sensor having an increased GMR ratio by virtue of an AP pinned layer structure in which the first and second pinned layers are separated by an AP coupling layer having a nano-oxide layer formed as an oxidized surface portion of the AP coupling layer. The nano-oxide layer provides an increase in the specular scattering, and in turn, an increase in the GMR ratio.

Abstract: A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer.

Abstract: A method and an apparatus for smoothing surfaces on an atomic scale. The invention performs smoothing of surfaces by use of a low energy ion or neutral noble gas beam, which may be formed in an ion source or a remote plasma source. The smoothing process may comprise a post-deposition atomic smoothing step (e.g., an assist smoothing step) in a multilayer fabrication procedure. The invention utilizes combinations of relatively low particle energy (e.g., below the sputter threshold of the material) and near normal incidence angles, which achieve improved smoothing of a surface on an atomic scale with substantially no etching of the surface.

Abstract: A magnetic field sensor comprising a layered structure (3) E/Fo/S/F, in which: E is an exchange-biasing layer, comprising nickel oxide; Fo is a ferromagnetic layer with a fixed magnetization, comprising cobalt; S is a spacer layer; Ff is a ferromagnetic layer with a free magnetization, whereby the material of the layer Ff has a magnetostriction constant of at most 1.5×10−6 and a crystal anisotropy of at most 1.3 J/m3. Such a structure (3) demonstrates a relatively high magneto-resistance ratio (of the order of 15%), and yet a relatively low coercivity (of the order of 0.2 kA/m). Examples of suitable materials for use in the layer Ff include Ni66Fe16Co18 and Ni72Fe21Co7.

Abstract: A thin film shielded magnetic read head device comprises an end face extending in a first direction, in which a magnetic information carrier is movable with respect to the magnetic head device, and in a second direction, perpendicular to said first direction. The magnetic head device further comprises shield forming flux guiding elements for magnetic cooperation with the information carrier, which elements extend in the second direction and in a third direction, perpendicular to the first and the second direction. A number of magnetoresistive elements each having a spin tunnel junction structure is provided, which number of magnetoresistive elements corresponds to with the number of magnetic channels of the magnetic head device. One of said shields forms a common contact lead for the current through said magnetoresistive elements. Thin film magnetic read head device is applied in a system for reading information from a magnetic information carrier.

Abstract: The device comprises a Wheatstone bridge with at least four magnetoresistive elements (1a, 1b, 1c, 1d) on a substrate (15), each magnetoresistive element comprising at least one sensitive portion (13) comprising successively a first ferromagnetic layer (19) having a magnetic easy axis (27) extending in a first direction, a non-magnetic layer (21) and a second ferromagnetic layer (23) having a magnetic easy axis (29) extending in a second direction that is different from the first direction. The sensitive portions (13) have mutually parallel sensitive directions that are parallel to a third direction (X). Each magnetoresistive element (1a, 1b, 1c, 1d) is associated with a current conductor (35a, 35b, 35c, 35d) provided in the immediate vicinity of that magnetoresistive element. The first direction (27) is canted through an acute angle with respect to the third direction (X), and the second direction (29) is canted in the opposite sense through an acute angle with respect to the third direction.

Abstract: A device for detecting a magnetic field, which device comprises a magneto-resistive multilayer structure comprising a first magnetic layer (1) which is separated from a second magnetic layer by an interposed non-magnetic layer, the multilayer structure having a first in-plane reference axis (R.sub.1) coinciding with the direction in which magnetic flux is offered to the multilayer structure during operation, and a second in-plane reference axis (R.sub.2) which is perpendicular to the first reference axis (R.sub.1), whereby the magnetic easy axis (E.sub.1) of the first magnetic layer (1) is canted through an acute in-plane angle .alpha. with respect to the second reference axis (R.sub.2), and the magnetic easy axis (E.sub.2) of the second magnetic layer is canted in the opposite sense through an acute in-plane angle .beta. with respect to the second reference axis (R.sub.2).

Abstract: A device for determining the orientation of a vehicle includes a magnetic field sensor (3) which is arranged in the vicinity of a ferromagnetic outer wall of the body of the vehicle and which is rigidly connected to the wall. External magnetic fields could unpredictably magnetize the wall portion (1) of the body, in the vicinity of which the magnetic field sensor (3) is provided, so that the measurements would become inaccurate. In order to achieve a substantial reduction of these adverse effects of external magnetic fields, the relevant wall portion is magnetically stabilized, preferably by including it in a magnetic circuit which also includes at least a magnet (11; 23, 27).