Abstract: Lithographic patterning method for creating features on a surface of a substrate, including the steps of: applying a resist material to the surface; performing resist processing steps, including at least: selectively exposing the resist material layer to a surface treatment step, wherein the resist material in the exposed locations is chemically modified; and developing the resist material layer to selectively remove the resist material locally. The method further comprises detecting, during or after the resist processing steps, a chemical modification of the resist material for monitoring or evaluating the processing steps. The step of detecting is performed by scanning the surface using a scanning probe microscopy device, and wherein the scanning includes contacting the surface with the probe tip in a probing area. The probing area coincides with at least one location of the exposed locations and non-exposed locations, for detecting the chemical modification. The document further describes a system.

Abstract: The invention is directed to a method for removing particulate contaminants from the backside of a wafer or reticle, and to a cleaning substrate for use in such method. In the method of the invention particulate contaminants are removed from the backside of a wafer or reticle with a cleaning substrate. The cleaning substrate comprises protrusions and a tacky layer between the protrusions. The method comprises contacting the backside of the wafer or reticle with the protrusions of the cleaning substrate while maintaining a distance between the wafer or reticle and the tacky layer, the distance being in the range of 1-10 ?m.

Abstract: The invention is directed to a method for removing particulate contaminants from the backside of a wafer or reticle, and to a cleaning substrate for use in such method. In the method of the invention particulate contaminants are removed from the backside of a wafer or reticle with a cleaning substrate. The cleaning substrate comprises protrusions and a tacky layer between the protrusions. The method comprises contacting the backside of the wafer or reticle with the protrusions of the cleaning substrate while maintaining a distance between the wafer or reticle and the tacky layer, the distance being in the range of 1-10 ?m.

Abstract: A particulate contamination measurement method and apparatus are discussed. The method, for example, comprises pressing a measurement surface (5) of a polyurethane elastomer (2) against a surface (7) to be measured, removing the polyurethane elastomer from the surface without leaving residues, then using an optical apparatus (11) to detect particles (8) which have been removed by the polyurethane elastomer from the surface and which have become attached to the polyurethane elastomer.

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.

Abstract: A method of cleaning a lithography apparatus using an aerosol spray is described. The spray from the aerosol is contained in a space.

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: A particulate contamination measurement method and apparatus are discussed. The method, for example, comprises pressing a measurement surface (5) of a polyurethane elastomer (2) against a surface (7) to be 2 measured, removing the polyurethane elastomer from the surface without leaving residues, then using an optical apparatus (11) to detect particles (8) which have been removed by the polyurethane elastomer from the surface and which have become attached to the polyurethane elastomer.

Abstract: An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Abstract: A place station for a pick-and-place machine, comprising: a place stage assembly comprising a place stage for supporting a substrate; a covering for providing a clean environment at the substrate, the covering comprising a first opening in a first face of the covering through which a placement operation may be performed to a limited area of the substrate; wherein the place stage and the covering are mounted for relative movement to allow the opening to achieve a selected relative position over the substrate.

Abstract: A pick-and-place machine, comprising: a pick station; a place station; a pick/place head for transporting a die from the pick station along a transport path to the place station; wherein the machine further comprises a die-face processing means, comprising an inspection unit and/or a cleaning unit, operable to process a face of the die on the transport path.

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract: An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Abstract: An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Abstract: A lithographic apparatus includes a fluid supply system configured to provide a cleaning fluid to a surface to be cleaned. The cleaning fluid includes from 25 to 98.99 wt % water; from 1 to 74.99 wt % solvent selected from one or more glycol ethers, esters, alcohols and ketones; and from 0.01 to 5 wt % surfactant.

Abstract: A method of cleaning a lithography apparatus using an aerosol spray is described. The spray from the aerosol is contained in a space.

Abstract: A lithographic apparatus is disclosed. The apparatus includes an illumination system configured to condition an extreme ultraviolet radiation beam, a patterning device configured to impart the extreme ultraviolet radiation beam with a pattern in its cross-section to form a patterned extreme ultraviolet radiation beam, a substrate table constructed to hold a substrate, a projection system provided with reflective optics configured to project the patterned extreme ultraviolet radiation beam onto a target portion of the substrate, a vacuum chamber constructed to create a vacuum environment, and a detection unit arranged within the vacuum chamber to detect contamination on the patterning device.