Patents by Inventor Jacques Daval

Jacques Daval has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5981093
    Abstract: A magneto-optical recording medium having a stack of magnetic layers which include at least one rare earth element and at least one transition metal element. At least one of the magnetic layers contain fluorine with an atomic concentration less than 1%. A process for producing a magneto-optical recording medium including magnetic layers. The process includes a step of controlling the Curie temperatures of the magnetic layers by controlling a fluorine atomic concentration of the magnetic layers.
    Type: Grant
    Filed: March 10, 1997
    Date of Patent: November 9, 1999
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Bernard Bechevet, Jacques Daval, Bruno Valon, Marie-Fran.cedilla.oise Armand
  • Patent number: 5754516
    Abstract: Microstylus recording device covered by a magnetoresistive multilayer. According to the invention, a microstylus (12) is covered by a magnetoresistive layer (46).
    Type: Grant
    Filed: December 9, 1996
    Date of Patent: May 19, 1998
    Assignee: Commissariat A L'Energie Atomique
    Inventors: Jacques Daval, Bernard Bechevet
  • Patent number: 5241758
    Abstract: The blowing ramp formed by the blowing elements makes it possible to maintain under an ultra-clean atmosphere the planar services of objects during their transportion or conveying, whilst using a limited air flow; the blowing elements are mainly constituted by a plate 2 having a central orifice 6 facing which is located a pipe 4 supplied with ultra-clean air; the process consists of placing the surface (11) of the object (10) at a distance (d) of approximately 1 mm from the blowing surface (7). The flow of air between these two surfaces is easily regulated in such a way as to be laminar, thus providing protection against ambient particulate contamination, which application may be applied to the conveying of silicon wafers.
    Type: Grant
    Filed: April 23, 1991
    Date of Patent: September 7, 1993
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Didier Cruz, Jacques Daval, Jean-Pierre Lazzari, Francois Torrecillas
  • Patent number: 5112277
    Abstract: The blowing door permits the passage of an object (6) from the interior of a first container (5) to a second container (4) without the respective atmospheres of the interior of these two containers being polluted.The blowing door (2) comprises a pressurized fluid inlet (17), an inner chamber (15) and at least one of its faces is ventilated by means of filter (14) placed between the face (11) and the inner chamber (15). During the opening of the door (2), the face (11) in contact with the external atmosphere is then ventilated, so that polluting particles are not brought into the containers (4, 5) during the closure of the door (2).Application to the treatment of silicon wafers or chips to be used in microelectronics.
    Type: Grant
    Filed: February 28, 1991
    Date of Patent: May 12, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Didier Cruz, Jacques Daval
  • Patent number: 4752451
    Abstract: The process involves producing a monocrystal from the ferroelectric compound, annealing the monocrystal and cooling the latter in a zero longitudinal temperature gradient. The apparatus comprises means for producing the monocrystal, and heating means for annealing the monocrystal in a zero temperature gradient, as well as for cooling the monocrystal in a zero longitudinal temperature gradient after annealing. The strain-free monocrystals may be used in the production of surface wave filters, modulators and optical amplifiers.
    Type: Grant
    Filed: August 27, 1986
    Date of Patent: June 21, 1988
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Jacques Aubert, Bernard Bechevet, Jacques Daval
  • Patent number: 4698281
    Abstract: The invention relates to a magnetic material containing either one or more rare earth elements, chosen from among lutetium, thulium and ytterbium, or yttrium. It also relates to a magnetic film with a high Faraday rotation constituted by a substrate coated with an epitactic layer of a magnetic material of the aforementioned type.The process for the production of such a magnetic film involves the deposition of a garnet film by liquid phase epitaxy on a substrate, use being made of an epitaxy bath containing gadolinium oxide, praseodymium oxide, and at least one oxide of a metal M, bismuth oxide, iron oxide, gallium oxide and/or aluminium oxide and a solvent incorporating lead oxide and boron oxide.
    Type: Grant
    Filed: October 15, 1985
    Date of Patent: October 6, 1987
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Marie-Francoise Armand, Jacques Daval, Bernard Ferrand, Hubert Moriceau
  • Patent number: 4623423
    Abstract: The process involves producing a monocrystal from the ferroelectric compound, annealing the monocrystal and cooling the latter in a zero longitudinal temperature gradient. The apparatus comprises means for producing the monocrystal and heating means for annealing the monocrystal in a zero temperature gradient, as well as for cooling the monocrystal in a zero longitudinal temperature gradient after annealing. The strain-free monocrystals may be used in the production of surface wave filters, modulators and optical amplifiers.
    Type: Grant
    Filed: April 28, 1983
    Date of Patent: November 18, 1986
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Jacques Aubert, Bernard Bechevet, Jacques Daval
  • Patent number: 4322454
    Abstract: Process for regulating to desired values the size of the bubbles of magnetic bubble elements during the manufacture of such elements by liquid phase deposition into a non-magnetic substrate of a ferrimagnetic garnet film of formula:(T.sub.a.sup.1 T.sub.b.sup.2 T.sub.c.sup.3 Ca.sub.d) (Fe.sub.e Ge.sub.g) O.sub.12in which T.sup.1, T.sup.2 and T.sup.3, which differ from one another, represent an element in the series of rare earths, including yttrium, a,b,c and d are numbers such that their sum is substantially equal to 3 and e and f are numbers such that their sum is substantially equal to 5, wherein such elements are produced by using epitaxy baths comprising calcium oxide or carbonate and predetermined quantities of ferric oxide, oxides of elements T.sup.1, T.sup.2 and T.sup.
    Type: Grant
    Filed: September 24, 1980
    Date of Patent: March 30, 1982
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Didier Challeton, Jacques Daval, Bernard Ferrand, Hubert Moriceau