Abstract: The invention concerns a monolithic substrate for an electronic power component which is formed by a sintered stack of layers of dielectric material having an internal system of ducts for the circulation of a cooling fluid. The system is a closed system which opens at the surface of the substrate by way of two orifices which respectively provide for the intake of the pressurized fluid into the internal system of ducts and the removal thereof from said system.

Abstract: The invention concerns a monolithic substrate for an electronic power component which is formed by a sintered stack of layers of dielectric material having an internal system of ducts for the circulation of a cooling fluid. The system is a closed system which opens at the surface of the substrate by way of two orifices which respectively provide for the intake of the pressurized fluid into the internal system of ducts and the removal thereof from said system.

Abstract: A process is disclosed for forming an interconnecting substrate for electronic components based on a cordierite ceramic, the substrate having a relatively small dielectric coefficient, allowing use in ultra high frequency applications. In one embodiment, the substrate is prepared from a powder which is sintered at approximately 980 degrees, allowing coatings of silver heated in an oxidizing atmosphere, or copper heated in a reducing atmosphere. In another embodiment, the powder is sintered at approximately 1350.degree. C., allowing coatings of a palladium base heated in an oxidizing atmosphere or molybdenum or tungsten base heated in reducing atmosphere.

Abstract: The substrate is formed by a stack of sheets of dielectric material (10) at least some of which have conductive patterns thereon (21-24); the substrate has conductive emerging portions (31, 32) for connecting the terminals of the component (1) to at least one internal layer provided with conductive tracks (24) providing layer-to-layer interconnection and interconnection with emerging portions in accordance with a pre-established patterns. According to the invention, the composition of the dielectric material comprises 92% to 98% alumina, and preferably 96%, with a melting agent based on magnesia titanate enabling the maximum firing temperature to be reduced to about 1400.degree. C. The conductive patterns are made of a non-oxidizable metal which is not meltable at high temperature, e.g. palladium or a silver-palladium alloy. The properties of the substrate obtained in this manner are comparable to those of a substrate made of 99.9% ultra-pure alumina.

Abstract: The substrate is formed by a stack of sheets of dielectric material (10) at least some of which have conductive patterns thereon (21-24); the substrate has conductive emerging portions (31, 32) for connecting the terminals of the component (1) to at least one internal layer provided with conductive tracks (24) providing layer-to-layer interconnection and interconnection with emerging portions in accordance with a pre-established patterns. According to the invention, the composition of the dielectric material comprises 92% to 98% alumina, and preferably 96%, with a melting agent based on magnesia titanate enabling the maximum firing temperature to be reduced to about 1400.degree. C. The conductive patterns are made of a non-oxidizable metal which is not meltable at high temperature, e.g. palladium or a silver-palladium alloy. The properties of the substrate obtained in this manner are comparable to those of a substrate made of 99.9% ultra-pure alumina.

Abstract: The invention relates to a support (100) for a high-speed component (30) in particular a hyperfrequency component. The support is in the form of a stack of high dielectric constant ceramic sheets which are sintered and which are suitable for receiving surface metallization (21-24) to constitute connections to the terminals of the component.According to the invention, the support includes a central zone (110) emerging in the surface of the support with substantially the same area as the supported component (30) and is immediately adjacent to the location of the future supported component. This zone is formed of low dielectric constant material. Outside the central zone and peripheral thereto, the support includes at least one internal metallization (131, 132) at shallow depth (e) formed by a conductive pattern carried by one of the sheets of the stack and connected to a ground connection (141, 142).