Abstract: A read/write memory cell comprises a first switch having one input which constitutes the data input-output of the cell and another input connected to a loop circuit comprises a first inverter, a second inverter and a second switch. The first and second switches are controlled in such a way that on a write operation the first is closed and the second open. In the absence of any write or read operation the first switch is open and the second switch is closed. On a read operation both switches are closed. A read/write memory of N words each of P bits is obtained by associating N.times.P cells of this kind in a matrix comprising N rows and P columns.