Abstract: A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

Abstract: A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

Abstract: A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

Abstract: A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

Abstract: A GaN boule is epitaxially grown by reacting a vapor of the metal Ga with the gas NH3 at a high temperature of about 1200-degrees C., which high temperature causes the NH3 to dissociate into the two elements N and H. A seed 51 of GaN is placed within a growth-furnace that is heated to about 1200-degrees C., and an input stream of Ga vapor and NH3 gas are directed incident on the GaN seed. An upward-facing, shower head-shaped, manifold is provided to uniformly distribute the Ga vapor and the NH3 gas to the interior of the growth-furnace at a location that is generally below and spaced from the bottom of the GaN seed. GaN vapor is thus formed within this space, generally adjacent to the surface of the boule. At the exterior surface of the GaN seed, the Ga vapor reacts with the NH3 gas to epitaxially form solid GaN on the exterior surface of the GaN seed, and to also form H2.

Abstract: A semiconductor laser includes a housing having a vacuum therein and a window that provides for the exit of a laser beam from the housing. A cathode within the housing emits a stream of electrons, and a wide bandgap semiconductor anode within said housing is impacted by the electron stream. The wide bandgap semiconductor has a bandgap energy and provides a resonator cavity that is physically spaced from the cathode. This resonant cavity is generally aligned with the window. An electric field acts in a space between the semiconductor anode and the cathode to accelerate the electron stream toward said semiconductor anode, thereby causing electron-hole pairs to be generated within the semiconductor anode, such that recombination of these electron-hole pairs generates photons having an energy that is generally equal to the bandgap energy of the semiconductor anode, these photons then forming a coherent laser beam.

Abstract: An electroluminescent solid state device includes an active body member that is formed of a single crystalline metal oxide, such as aluminum oxide, that is doped with a rare earth element, such as erbium and/or terbium and an activator atom such as oxygen and/or fluorine. The metal oxide body member is electron excited by kinetic electrons that are emitted by a cold cathode. The ends of the metal oxide body member are polished to form a Fabry-Perot resonator, thus providing for coherent radiation from the device. As an alternative to the use of a Fabry-Perot cavity, an acoustic wave generator is associated with the metal oxide body member in order to launch acoustic waves into the body member. The frequency of energization of the acoustic wave generator operates to select a radiation wavelength from one or more emission wavelengths that are produced by doping the metal oxide body member with one or more rare earth elements.

Abstract: A semiconductor-chip is bonded to a chip-carrier substrate by way of a gold-to-gold bonding interface. A vacuum chuck is provided to physically hold the semiconductor-chip in physical contact with, the chip-carrier substrate as static force, ultrasonic power, and an elevated temperature are applied to two mating gold surfaces that are formed by two continuous and physically mating gold layers. The bonded assembly is encased in a potting ceramic, or the bonded assembly is encased in a housing that includes a transparent cover that enables use as an optoelectronic semiconductor device.

Abstract: An electroluminescent solid state device includes an active body member that is formed of a single crystalline metal oxide, such as aluminum oxide, that is doped with a rare earth element, such as erbium and/or terbium and an activator atom such as oxygen and/or fluorine. The metal oxide body member is electron excited by kinetic electrons that are emitted by a cold cathode. The ends of the metal oxide body member are polished to form a Fabry-Perot resonator, thus providing for coherent radiation from the device. As an alternative to the use of a Fabry-Perot cavity, an acoustic wave generator is associated with the metal oxide body member in order to launch acoustic waves into the body member. The frequency of energization of the acoustic wave generator operates to select a radiation wavelength from one or more emission wavelengths that are produced by doping the metal oxide body member with one or more rare earth elements.

Abstract: A semiconductor-chip is bonded to a chip-carrier substrate by way of a gold-to-gold bonding interface. A vacuum chuck is provided to physically hold the semiconductor-chip in physical contact with, the chip-carrier substrate as static force, ultrasonic power, and an elevated temperature are applied to two mating gold surfaces that are formed by two continuous and physically mating gold layers. The bonded assembly is encased in a potting ceramic, or the bonded assembly is encased in a housing that includes a transparent cover that enables use as an optoelectronic semiconductor device.

Abstract: Dynamic variation in the color produced by a silicon quantum dot laser is achieved by utilizing segmented sections or patches of quantum dots of differing sizes to produce different colors of light. The amount of each color of light produced is controlled by selectively biasing the segments of quantum dots. The light is caused to resonate coherently and is emitted out by a diffraction grating. The dynamic variation in the color of light produced by such a device makes it useful as a multicolor pixel in a color display of images.

Abstract: A method of passivating a semiconductor device having at least one active component disposed therein comprises exposing the device to atomic hydrogen at a temperature lower than about 450.degree. C.

Abstract: Compact oscilloscope in which the display, an array of light emitting diodes, is integral with the probe. The array continuously is scanned column by column at a controllable rate and concurrently voltages are applied to rows selected in accordance with the amplitude of the test waveform. Light is emitted from those diodes of the array receiving coincident row and column excitation to thereby display the test waveform.

Abstract: A layer of amorphous silicon-carbide prepared by a glow discharge in a mixture of silane, hydrocarbon and doping gases is at the solar radiation incident surface of a photovoltaic device. The photovoltaic device includes first and second contiguous layers of amorphous silicon fabricated by a glow discharge in silane. The amorphous silicon carbide layer is contiguous to the second layer and opposite the first layer. The amorphous silicon carbide layer is substantially transparent to solar radiation and highly conductive, providing increased solar radiation collection efficiency and reduced internal resistance.

Abstract: A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device.

Abstract: A body of a photovoltaic device is of silicon having gallium and arsenic paired molecular impurities of a concentration on the order of 10.sup.18 atoms/cm.sup.3 or greater.

Abstract: An electroluminescent semiconductor device having an optical axis includes two cylindrical surface segments spaced from and opposite each other. One of the cylindrical surface segments is the light emitting surface with a center of curvature C.sub.1 and a focal point, f, on the optical axis. The other cylindrical surface segment is a light reflecting surface having a center of curvature C.sub.2 on the optical axis. The electroaluminescent device has a pair of flat surfaces, spaced from each other and substantially perpendicular to the light emitting and reflecting surfaces. On one of the flat surfaces is a first electrical contact. On a portion of the opposite flat surface is a second electrical contact which is positioned along the optical axis on or between the center of curvature C.sub.1 and the focal point f. Light is generated in the electroluminescent device in the area of the second contact. Preferably, if the focal point f and center of curvature C.sub.

Abstract: A high emission of electrons, as a result of negative electron affinity, has been achieved from an insulating nitride coated with a film of an electropositive work function reducing material.