Abstract: A method for treating substrates, such as silicon wafers, wherein the substrates are immersed for some time in a bath containing a liquid and are taken therefrom so slowly that practically all of the liquid remains in the bath. The substrates are brought from the liquid directly into contact with a vapor of an organic solvent which is mixed with a carrier gas and introduced from gas leads having outlet nozzles. The vapor is miscible with the liquid to yield a mixture having a surface tension lower than that of the liquid, and which does not condense on the substrates. No drying marks with organic or metallic residues or other contaminations remain on the substrates.

Abstract: Apparatus for treating substrates, such as silicon wafers (1), wherein the substrates are immersed for some time in a bath (2) containing a liquid (3) and are taken therefrom so slowly that practically all of the liquid remains in the bath (2). The substrates (1) are brought from the liquid (3) directly into contact with a vapor of an organic solvent which is mixed with a carrier gas and introduced from gas leads (17) having outlet nozzles (18). The vapor is miscible with the liquid (3) to yield a mixture having a surface tension lower than that of the liquid, and which does not condense on the substrates. No drying marks with organic or metallic residues or other contaminations remain on the substrates (1).

Abstract: A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (1) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing thereon via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

Abstract: A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (3) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

Abstract: A color cathode ray tube has a shadow mask. The shadow mask is provided with a layer of a material having an average Z number below 20 on the side facing the phosphor screen. The layer is preferable deposited by means of electrodeposition.

Abstract: The invention relates to the manufacture of a semiconductor device, in which a titanium-tungsten layer (5) must be etched. In order to obtain a homogeneous course of the etching process, according to the invention, the etching is effected in a buffered hydrogen peroxide solution having a pH between 1 and 6.