Abstract: The invention relates to a matrix of light-emitting diodes and a method of manufacturing same. A matrix comprises highly doped contact lines of a first conductivity type, localization zones of the second conductivity type opposite to the first type extending transversely with respect to the semi-insulating zones arranged along lines and/or columns and separating along diodes an active layer in contact with the contact lines and a superficial injection layer. The contacts connect the diodes columnwise, regions being internally limited along lines by the area straight above the upper parts of the localization zones, and along columns by the semi-insulating regions. Thus, the contacts are entirely situated outside the light emitting zones defined by the localization zones. The method of manufacturing utilizes steps of localized etching and epitaxy.

Abstract: A semiconductor device includes an electroluminescent diode, which is obtained from at least one epitaxial layer of a III-V compound vapor-deposited on a substrate which is also of a III-V compound. The invention is characterized in that, preferably before the epitaxial layer is vapor deposited, a layer having a disturbed crystal structure is provided at the surface of the substrate, as a result of which the substrate does not generate radiation.

Abstract: A boat for use in the epitaxial crystal growth of two layers on multiple substrates includes a structure where the substrates are located in a cavity in a support layer of the crucible structure, and a slide layer having two reservoirs is provided thereover. The two reservoirs contain the respective liquid solution for the two epitaxial layers to be provided, and the two reservoirs are respectively provided with the slide layer being the bottom layer of one reservoir and a removable sealing element being the bottom layer of the other reservoir. Upon moving the slide layer over the bottom supporting layer, the multiple substrates in the cavity are provided with liquid solutions to obtain epitaxial growth.

Abstract: A method is provided of manufacturing, on a substrate of a binary compound, layers of ternary or quaternary compounds in which epitaxial intermediate layers separate the substrate from the end layer, wherein the relative increase of the dimensions of the crystal lattices in the successive epitaxial intermediate layers increases.