Patents by Inventor Jacques Le Menn

Jacques Le Menn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5468673
    Abstract: A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of the deep region, a second, P-type, deep diffused region contacting the periphery of the deep region, an N-type highly doped surface region coating the surface of the first deep diffused region and forming therewith an avalanche junction. At least another structure identical to the avalanche diode structure, without the N-type surface region, forms a resistor between its electrodes.
    Type: Grant
    Filed: March 28, 1995
    Date of Patent: November 21, 1995
    Assignee: SGS-Thomson Microelectronics, S.A.
    Inventors: Gerard Le Roux, Jacques Le Menn
  • Patent number: 5414295
    Abstract: A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of the deep region, a second, P-type, deep diffused region contacting the periphery of the deep region, an N-type highly doped surface region coating the surface of the first deep diffused region and forming therewith an avalanche junction. At least another structure identical to the avalanche diode structure, without the N-type surface region, forms a resistor between its electrodes.
    Type: Grant
    Filed: February 28, 1994
    Date of Patent: May 9, 1995
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Gerard Le Roux, Jacques Le Menn