Abstract: An electro-luminescent semiconductor device having a plurality of electro-luminescent integrated diodes is provided in the present invention to be individually optically isolated from one another. By this construction data display and optical coding can be established in a device in accordance with the present invention.

Abstract: An electroluminescent diode with photon recycling having an active electroluminescent second semiconductor layer present between a first and a third semiconductor layer with larger bandwidth and of opposite conductivity type. According to the invention, the active layer has a compensation factor of less than 1/3 and a thickness between 0.1 and 3 absorption lengths of the emitted radiation, the first semiconductor layer has a partially reflecting surface, and the third semiconductor layer has a reflecting surface with two preferably co-planar electrodes one of which is connected to the first semiconductor layer through a highly doped contact zone.

Abstract: A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor material. The semiconductor material of the passivating layer differs from that of the underlying semiconductor layer and has a larger energy gap than the underlying layer.

Abstract: A reversible optoelectronic device for use in a narrow range of light wavelength, comprising a semiconductor body comprising at least one transparent surface region of a first conductivity type and an assembly of two active regions, one of said active regions having a first conductivity type and another said active region having the opposite conductivity type and determining a semiconductor junction having electroluminescent and photosensitive properties, said assembly of said two active regions consisting of a material having a smaller forbidden bandwidth that the material of said surface region, said surface region being a strongly doped and localized in a deposited layer that is of the same composition and that has a low doping, the depth of said junction with respect to the boundary between said layer and said assembly of active regions being between one-half and one-quarter of the diffusion length of the minority carriers in said active region of the first type, and said material of said assembly being s

Abstract: A method of manufacturing a hetero junction by epitaxial deposition in a solution.The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the modification.Application to electroluminescent devices of III and V type.

Abstract: A monolithic electroluminescent semiconductor device comprising a monocrystalline semiconductor body having a major surface; a semiconductor zone which extends along a part of said major surface of said semiconductor body, said zone adjoining a portion of the semiconductor body and forming therewith a diode that can emit radiation, said diode having a junction which extends to at least said surface of said semiconductor body; a current path element disposed at said major surface and connected electrically in parallel with said junction, said current path element being physically separate from said semiconductor zone and said semiconductor body portion and leaving said junction at least partly intact at said surface, whereby the current voltage characteristics of said current path and of said diode intersect each other and the dynamic admittance of said current path at the intersection is smaller than that of said diode.

Abstract: A device having an electroluminescent diode of which the two regions have a homogeneous concentration of one type of doping centers.The doping centers of the opposite type have a concentration which decreases towards the emissive surface from the junction. Manufacture of the diode by out-diffusion.Application to devices having electroluminescent diodes with compounds III-V.

Abstract: A method of energizing an electroluminescent device including several in series connected elementary light sources at least two of which emit radiations of different wavelengths, comprising the steps of supplying the light sources with current pulses of different intensities and controlling the duration of the pulses so that each intensity is inversely proportional to the emitted light flux.