Abstract: Fiber amplifiers for extending their gain bandwidth through an optimization of the host matrix using phosphorus/aluminum (P/Al) as glass modifier are provided. In one aspect, an optical glass fiber comprising an Erbium doped silicate is provided, where the optical glass fiber comprises P2O5 of greater than 6 mol %; and Al2O3 of between 1.5 and 6 mol %, where a molar percent ratio of the P2O5 and the Al2O3 is between 2 and 4. Further, in some cases, use of yttrium as an alternative co-dopant to ytterbium may be used.

Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.

Abstract: A composite includes a plastic substrate and an electrical insulator layer formed on the plastic substrate. The electrical insulator layer contains boron nitride nanotubes (BNNTs), which may be unmodified or modified BNNTS. The composite is suitable for use in making printed electronic devices. A process includes providing a plastic substrate and forming on at least a portion of a surface of the plastic substrate a layer that contains the BNNTs. A metallic ink trace is formed on a portion of the layer, such that the metallic ink trace is spaced-apart from the substrate. Using photonic or thermal sintering techniques, the metallic ink trace is then sintered.

Abstract: An electronic device for sensing a target analyte in a gas, liquid or vapor sample, the device has at least two sensing elements, each sensing element having an exposed layer of a transduction material supported on a dielectric substrate. The dielectric substrate of at least one of the sensing elements is made of a different dielectric material than the dielectric substrate of at least one other of the sensing elements. The different dielectric materials providing a different sensing response according to one or more transduction modes. The plurality of sensing elements in the device yield a specific transduction pattern for a specific target analyte in a gas, liquid or vapor sample.

Abstract: Devices and methods to perform Raman spectroscopy with a structured excitation profile to obtain a Raman excitation map. A device includes a broadband light source to emit a broadband light beam and excitation optics to disperse the broadband light beam to strike a sample as incident light according to a structured excitation profile. The device further includes analysis optics to collect scattered light scattered by the incident light striking the sample, block Rayleigh scatter from the collected scattered light in a manner complementary to the structured excitation profile, and direct Raman scatter from the collected scattered light to a sensor to generate a signal to form a Raman excitation map.

Abstract: Devices and methods to perform Raman spectroscopy with a structured excitation profile to obtain a Raman excitation map. A device includes a broadband light source to emit a broadband light beam and excitation optics to disperse the broadband light beam to strike a sample as incident light according to a structured excitation profile. The device further includes analysis optics to collect scattered light scattered by the incident light striking the sample, block Rayleigh scatter from the collected scattered light in a manner complementary to the structured excitation profile, and direct Raman scatter from the collected scattered light to a sensor to generate a signal to form a Raman excitation map.

Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.

Abstract: An electronic device for sensing a target analyte in a gas, liquid or vapor sample, the device has at least two sensing elements, each sensing element having an exposed layer of a transduction material supported on a dielectric substrate. The dielectric substrate of at least one of the sensing elements is made of a different dielectric material than the dielectric substrate of at least one other of the sensing elements. The different dielectric materials providing a different sensing response according to one or more transduction modes. The plurality of sensing elements in the device yield a specific transduction pattern for a specific target analyte in a gas, liquid or vapor sample.

Abstract: A composite includes a plastic substrate and an electrical insulator layer formed on the plastic substrate. The electrical insulator layer contains boron nitride nanotubes (BNNTs), which may be unmodified or modified BNNTS. The composite is suitable for use in making printed electronic devices. A process includes providing a plastic substrate and forming on at least a portion of a surface of the plastic substrate a layer that contains the BNNTs. A metallic ink trace is formed on a portion of the layer, such that the metallic ink trace is spaced-apart from the substrate. Using photonic or thermal sintering techniques, the metallic ink trace is then sintered.

Abstract: Provided is an apparatus for aerosol deposition of nanoparticles on a substrate. The apparatus includes: an aerosol generator for generating an aerosol of micron-sized droplets, each droplet having a limited number of nanoparticles; and a deposition chamber for receiving the aerosol from the aerosol generator. The deposition chamber having an electrostatic field for attracting droplets in the aerosol to the substrate. The electrostatic field being substantially perpendicular to the substrate. The apparatus allows for films/networks of nanoparticles to be patterned on the substrate to sub-millimeter feature sizes, which allows the fabrication of transistor devices for printable electronics applications. Also provided are methods for depositing nanoparticles on a substrate and materials having networks of such nanoparticles.

Abstract: A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level.

Abstract: A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.

Abstract: A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level.

Abstract: A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.

Abstract: A shadow mask method to fabricate electrodes with nanometer scale separation utilizes nanotubes (NTs). Metal wires with gaps are made by incorporating multi-wall carbon nanotubes (MWNTs) or single-wall carbon nanotubes (SWNTs) (or bundles thereof) into a tri-layer electron beam lithography process. The simple, highly controllable, and scaleable method can be used to make gaps with widths between 1 and 100 nm. Electronic transport measurements performed on individual SWNTs bridge nanogaps smaller than 30 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. Semiconducting SWNTs show an anomalous field effect transistor behavior.

Abstract: A shadow mask method to fabricate electrodes with nanometer scale separation utilizes nanotubes (NTs). Metal wires with gaps are made by incorporating multi-wall carbon nanotubes (MWNTs) or single-wall carbon nanotubes (SWNTs) (or bundles thereof) into a tri-layer electron beam lithography process. The simple, highly controllable, and scaleable method can be used to make gaps with widths between 1 and 100 nm. Electronic transport measurements performed on individual SWNTs bridge nanogaps smaller than 30 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. Semiconducting SWNTs show an anomalous field effect transistor behavior.

Abstract: The present invention relates to a method for reproducibly forming a predetermined quantum dot structure and a device produced using same. A crystal facet of a substrate base is patterned for providing a predetermined portion of the crystal facet for subsequent predetermined crystal growth. A first growth material is deposited for crystallographically growing a predetermined mesa structure on the predetermined portion of the crystal facet. The mesa structure, which is a portion of the quantum dot structure, comprises predetermined low index side facets and a predetermined top surface. A second growth material for forming at least a quantum dot on the mesa structure is then deposited. The number, the lateral dimensions and the location of the at least a quantum dot is determined by the mesa structure. A sufficient amount of the second growth material is deposited such that a sufficient thickness for Straski-Krastinow growth of the second growth material on the top surface of the mesa structure is exceeded.

Abstract: The invention relates to a method of continuously coating electrically conductive substrates using high-speed electrolysis in which the substrate is immersed successively in an electrolytic activating bath and an electrolytic coating bath. The two baths are of the same composition and the substrate is constantly maintained in one bath. The method is applicable especially to the nickel plating of fine aluminum wires intended for the production of flexible cable for aeronautical applications. These wires may be treated in layers and at high speed.

Abstract: To form lead or lead alloy terminals on cables comprising an insulative sheath and an aluminum core, the appropriate length of the core is bared and a metal part is fixed to the bared core. The terminal is then cast over this metal part. The metal part is compatible externally with the lead or the lead alloy forming the terminal and is compatible internally with the aluminum core. No high-resistivity substance is formed between any component layers of the resulting assembly.

Abstract: A method is disclosed for checking and obtaining in a moving mode the continuity of a metal covering on a metal wire of different nature belonging to the group of a wire being treated by a current strength and issuing from a covering bath and wire, the treatment of which is achieved and coming from a storage wheel. The method comprises continuously bringing the coated wire in contact with a volume of electrolyte solution chemically and physically inert with respect to the wire, and in which the sensitive part of a reference electrode is immersed, sliding the wire issuing from the volume against an electrical contact, measuring the electrical potential variations between the electrode and the contact, and when the potential current oscillates, noting the poorly covered wire and increasing the current strength on the wire being treated.